Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Michael Hosch"'
Autor:
Alexander Hugger, Aleksandra Dlugolecka, Raphael Ehrbrecht, Michael Hosch, Hermann Stieglauer
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 33:552-556
Wet chemical lift off in N-Methyl-2-pyrrolidone (NMP) is widely used in GaN HEMT Front End manufacturing. In case of a Ti-Al-Ni-Au based metal stack for ohmic contacts, the quality of the lift-off process is a strong function of the water content in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e7dd62c22a1aec0108f29c90d47d507
https://doi.org/10.1109/tsm.2020.3028446
https://doi.org/10.1109/tsm.2020.3028446
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 32:502-505
The semi-insulating characteristics of GaAs substrates makes GaAs front end manufacturing sensitive to ESD events occurring during wafer processing. Charges induced to the wafer by these ESD events can harm or even destroy insulating structures like
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a295d734b41fee4b94715115c155bca8
https://doi.org/10.1109/tsm.2019.2933013
https://doi.org/10.1109/tsm.2019.2933013
Redline Detection Announces Michael Hosch has Joined the Company as Director of Aftermarket Programs
Autor:
Redline Detection LLC
Publikováno v:
Business Wire (English). 04/14/2017.
Autor:
Benedikt Obermaier, Annika Welchar, Lioba Klaas, Vinona Wicht, Michael Hosch, Marie Louise Aicher, Richard Dodel
Publikováno v:
InFo Neurologie & Psychiatrie. 19:36-44
Fur die Therapie der Demenz vom Alzheimer-Typ befinden sich einige krankheitsmodifizierende Medikamente in der klinischen Entwicklung. Die Kosten hierfur sind jedoch hoch und die Entwicklung ist langwierig. Trotzdem sehen einige Forscher reale Chance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6da0a7868ec4f49196b82a03ec73952
https://doi.org/10.1007/s15005-017-2086-4
https://doi.org/10.1007/s15005-017-2086-4
Autor:
T. Rodle, Jan Grünenpütt, Bernd Schauwecker, Helmut Jung, Michael Hosch, Peter Abele, Michael Schäfer, Hervé Blanck
Publikováno v:
physica status solidi c. 11:940-944
Output capacitance (Cout) measurements on AlGaN-GaN HEMTs with different field plate (FP) sizes and different EPI configurations as well as different sheet resistances owing to surface preparation have been performed at VDS = 10 and 40 V. A model is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::593dc1d29a106ee6f58fe2893c608322
https://doi.org/10.1002/pssc.201300416
https://doi.org/10.1002/pssc.201300416
Autor:
Benoit Lambert, K. Riepe, Hervé Blanck, Hermann Stieglauer, Helmut Jung, Reza Behtash, J. Thorpe, S. Heckmann, Peter Brückner, Jörg Splettstößer, Laurent Favede, F. Bourgeois, Dominik Köhn, Didier Floriot, Zineb Ouarch, Marc Camiade, Michael Hosch
Publikováno v:
International Journal of Microwave and Wireless Technologies. 2:21-32
GaN technology has gained a lot of attention in Europe over the last few years for various domains including RF electronics. After a few years of active observation, United Monolithic Semiconductors (UMS) has taken the decision to introduce a GaN tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf72653439b8fc46bf839bd16e33c2da
https://doi.org/10.1017/s1759078710000073
https://doi.org/10.1017/s1759078710000073
Autor:
D. Floriot, U. Meiners, Helmut Jung, V. Brunel, Marc Camiade, Michael Hosch, H. Blanck, Z. Ouarch-Provost, J. Splettstößer, C. Chang, Benoit Lambert, J. Grünenpütt
Publikováno v:
2014 9th European Microwave Integrated Circuit Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbd59c978a8e858a66474fd44f226bed
https://doi.org/10.1109/eumic.2014.6997833
https://doi.org/10.1109/eumic.2014.6997833
Publikováno v:
2008 Asia-Pacific Microwave Conference.
An analysis of the impact of device layout and technology on the DC and RF performance of AlGaN/GaN HFETs is presented. For this analysis AlGaN/GaN HFETs fabricated on SiC substrate were extensively characterized by DC, small signal RF measurements a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f141b4faf7267e1882795fbd289eea0
https://doi.org/10.1109/apmc.2008.4958635
https://doi.org/10.1109/apmc.2008.4958635
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing; Nov2019, Vol. 32 Issue 4, p502-505, 4p
Autor:
Hugger, Alexander, Dlugolecka, Aleksandra, Stieglauer, Hermann, Ehrbrecht, Raphael, Hosch, Michael
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing; Nov2020, Vol. 33 Issue 4, p552-556, 5p