Zobrazeno 1 - 10
of 529
pro vyhledávání: '"Michael Heuken"'
Autor:
Oliver Maßmeyer, Jürgen Belz, Badrosadat Ojaghi Dogahe, Maximilian Widemann, Robin Günkel, Johannes Glowatzki, Max Bergmann, Sergej Pasko, Simonas Krotkus, Michael Heuken, Andreas Beyer, Kerstin Volz
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 23, Pp n/a-n/a (2024)
Abstract 2D materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting properties that make them hig
Externí odkaz:
https://doaj.org/article/055ed01e55424e8cb7319f1cebab7f4d
Autor:
Josef Schätz, Navin Nayi, Jonas Weber, Christoph Metzke, Sebastian Lukas, Jürgen Walter, Tim Schaffus, Fabian Streb, Eros Reato, Agata Piacentini, Annika Grundmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Stephan Pindl, Max C. Lemme
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness.
Externí odkaz:
https://doaj.org/article/ccfd73e65b764bda95fe7aa712a8d742
Autor:
Nico Rademacher, Eros Reato, Lukas Völkel, Annika Grundmann, Michael Heuken, Holger Kalisch, Andrei Vescan, Alwin Daus, Max C. Lemme
Publikováno v:
Micro and Nano Engineering, Vol 23, Iss , Pp 100256- (2024)
This study investigates the interactions between chemical vapor-deposited graphene and metal-organic chemical vapor-deposited molybdenum disulfide (MoS2) in heterostructures assembled via wet transfer. We use Raman spectroscopy to quantitatively dete
Externí odkaz:
https://doaj.org/article/94325540b28c4b1ba74f4961aa8daed4
Autor:
Alexandros Zachariadis, Michalis Chatzidis, Despoina Tselekidou, Olaf Wurzinger, Dietmar Keiper, Peter K. Baumann, Michael Heuken, Kyparisis Papadopoulos, Argiris Laskarakis, Stergios Logothetidis, Maria Gioti
Publikováno v:
Micromachines, Vol 15, Iss 9, p 1089 (2024)
Organometallic complexes containing reactive alkali metals, such as lithium (Li), represent a promising material approach for electron injection layers and electron transport layers (EILs and ETLs) to enhance the performance of Organic Light-Emitting
Externí odkaz:
https://doaj.org/article/cab9772598f74db79e657fdfd135693a
Autor:
Amir Ghiami, Annika Grundmann, Songyao Tang, Hleb Fiadziushkin, Zhaodong Wang, Stephan Aussen, Susanne Hoffmann-Eifert, Michael Heuken, Holger Kalisch, Andrei Vescan
Publikováno v:
Surfaces, Vol 6, Iss 4, Pp 351-363 (2023)
Metal–organic chemical vapor deposition (MOCVD) is a key method for scalable synthesis of two-dimensional transition metal dichalcogenide (2D-TMDC) layers. However, it faces several challenges, such as the unintentional co-deposition of carbon impu
Externí odkaz:
https://doaj.org/article/7983c6e8ec224c53a0c89c49b191aa3f
Autor:
Fahrettin Sarcan, Nicola J. Fairbairn, Panaiot Zotev, Toby Severs-Millard, Daniel J. Gillard, Xiaochen Wang, Ben Conran, Michael Heuken, Ayse Erol, Alexander I. Tartakovskii, Thomas F. Krauss, Gordon J. Hedley, Yue Wang
Publikováno v:
npj 2D Materials and Applications, Vol 7, Iss 1, Pp 1-7 (2023)
Abstract Focused ion beam (FIB) is an effective tool for precise nanoscale fabrication. It has recently been employed to tailor defect engineering in functional nanomaterials such as two-dimensional transition metal dichalcogenides (TMDCs), providing
Externí odkaz:
https://doaj.org/article/0325f8056846404d8b8db084be629aa9
Autor:
Henrik Wördenweber, Silvia Karthäuser, Annika Grundmann, Zhaodong Wang, Stephan Aussen, Holger Kalisch, Andrei Vescan, Michael Heuken, Rainer Waser, Susanne Hoffmann-Eifert
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-13 (2022)
Abstract Metal-free chemical vapor deposition (CVD) of single-layer graphene (SLG) on c-plane sapphire has recently been demonstrated for wafer diameters of up to 300 mm, and the high quality of the SLG layers is generally characterized by integral m
Externí odkaz:
https://doaj.org/article/7e7775063c2b42a5ab20cdb8671c41c2
Autor:
Matthias Moser, Mamta Pradhan, Mohammed Alomari, Michael Heuken, Thomas Schmitt, Ingmar Kallfass, Joachim N. Burghartz
Publikováno v:
Power Electronic Devices and Components, Vol 4, Iss , Pp 100032- (2023)
In this work, multi-layer PECVD SiNx/SiNx and SiNx/SiOy passivations are developed featuring very high soft breakdown strength and tunable stress properties, which would allow for stress engineering and wafer bow minimization. AlGaN/GaN-on-Si wafers
Externí odkaz:
https://doaj.org/article/15d182dfd302449abb4a8028a01b8af5
Autor:
Amir Ghiami, Tianyishan Sun, Hleb Fiadziushkin, Songyao Tang, Annika Grundmann, Michael Heuken, Holger Kalisch, Andrei Vescan
Publikováno v:
Crystals, Vol 13, Iss 10, p 1474 (2023)
Extensive research into two-dimensional transition metal dichalcogenides (2D-TMDCs) over the past decade has paved the way for the development of (opto)electronic devices with enhanced performance and novel capabilities. To realize devices based on 2
Externí odkaz:
https://doaj.org/article/9156f6d3e70d49b09c22156df0ba7b64
Autor:
Mamta Pradhan, Mohammed Alomari, Matthias Moser, Dirk Fahle, Herwig Hahn, Michael Heuken, Joachim N. Burghartz
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 748-755 (2021)
In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility
Externí odkaz:
https://doaj.org/article/e8048e097cbd4bdabb15a26b5cde3f5d