Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Michael Halfmoon"'
Autor:
Gabriele Merlo, Michael Kotschenreuther, Ehab Hassan, Andrew Nelson, Richard J. Groebner, David Hatch, Swadesh M Mahajan, Michael Halfmoon, Ahmed Diallo, Max Curie
Publikováno v:
Nuclear Fusion. 62:026008
Recent evidence points toward the microtearing mode (MTM) as an important fluctuation in the H-mode pedestal for anomalous electron heat transport. A study of the instabilities in the pedestal region carried out using gyrokinetic simulations to model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f50106d6f17128728190a1477e34acc8
https://doi.org/10.1088/1741-4326/ac3be5
https://doi.org/10.1088/1741-4326/ac3be5
Autor:
Michael Halfmoon, Darwin Shields, Yingdi Liu, Wenhua Xue, Xin Liu, Christine A. Rittenhouse, Hongli Dang, Sanwu Wang
Publikováno v:
Mathematical Methods in the Applied Sciences. 38:4495-4501
We report extensive first-principles electronic structure modeling and calculations for the SiC–SiO2 interface, a solid–solid interface formed during oxidation of silicon carbide (SiC). The interface modeling provides atomic-scale understanding a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7473f1254f01ae29076e5658edda8311
https://doi.org/10.1002/mma.2855
https://doi.org/10.1002/mma.2855
Autor:
Dylan Brennan, Michael Halfmoon
Publikováno v:
Physics of Plasmas. 24:062501
The effects that energetic trapped ions have on linear resistive magnetohydrodynamic (MHD) instabilities are studied in a reduced model that captures the essential physics driving or damping the modes through variations in the magnetic shear. The dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38a78994a18ba57489ed0400aa642709
https://doi.org/10.1063/1.4984772
https://doi.org/10.1063/1.4984772
Publikováno v:
Applied Physics Letters. 97:242111
High concentrations of defects at the SiC–SiO2 interface significantly reduce the efficiency of the SiC-based microelectronics. Investigations of the defect passivation are thus of great importance. We report first-principles density-functional-the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eac4c7864d84191e67312a69997d27e2
https://doi.org/10.1063/1.3527943
https://doi.org/10.1063/1.3527943