Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Michael Gurnett"'
Publikováno v:
Surface Science. 603:727-735
In this article we report our findings on the electronic structure of the Li induced Ge(1 1 1)–3 × 1reconstruction as determined by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9136c6bb6a498b3704cd50ce4a224902
https://doi.org/10.1016/j.susc.2009.01.019
https://doi.org/10.1016/j.susc.2009.01.019
Publikováno v:
Surface Science. 572:32-42
We have studied the thin film formation and the electronic structure of the organic molecular semiconductor 3,4,9,10 perylene tetracarboxylic dianhydride (PTCDA), on clean and on hydrogen-passivated Si(0 0 1) surfaces. The studies were made by means
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75885f56a232c25619dca3dfcf0d1e7d
https://doi.org/10.1016/j.susc.2004.08.030
https://doi.org/10.1016/j.susc.2004.08.030
Autor:
Kjell Magnusson, S. M. Gray, Lars Johansson, Michael Gurnett, M. K. J. Johansson, Jörgen Gustafsson, L. J. Holleboom, Susanna Widstrand
Publikováno v:
Physical Review B. 71
Core-level spectroscopy study of the Li/Si(111)-3x1, Na/Si(111)-3x1 and K/Si(111)-3x1 surfaces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebd9b866bf2c086467f8114ffb8212ba
https://doi.org/10.1103/physrevb.71.195408
https://doi.org/10.1103/physrevb.71.195408
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 10
We report on a high-resolution x-ray photoelectron spectroscopy (HRXPS) study using synchrotron radiation, for the identification of the core level binding energies of Ga 3d and N 1s, from a stoichiometric Ga-polar GaN(0001)-1×1 sample.Three surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ce4bb20e1d69a450c3110e4c78fce80
https://doi.org/10.1557/s1092578300000521
https://doi.org/10.1557/s1092578300000521
Autor:
Han Woong Yeom, Michael Gurnett, H. Miki, Kjell Magnusson, Susanna Widstrand, Lars Johansson, M. Oshima, Ellen Moons
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 9
We report on the investigation of GaN(0001)−1×1 using synchrotron radiation x-ray excited photoelectron spectra from the core levels Ga 3p and N 1s, as well as from the contaminants O 1s and C 1s. Measurements were done after outgassing (a) and du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b53b1f2e0ba302c68bcdb6ad15acf13b
https://doi.org/10.1557/s1092578300000399
https://doi.org/10.1557/s1092578300000399
Publikováno v:
Physical Review B. 66
The surface electronic structure of the $\mathrm{Si}(111)(3\ifmmode\times\else\texttimes\fi{}1)/(6\ifmmode\times\else\texttimes\fi{}1)\ensuremath{-}\mathrm{Ag}$ surface has been investigated by the means of angle-resolved ultraviolet photoemission us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ac1d41b92d1531c6ef7df715662f079
https://doi.org/10.1103/physrevb.66.161101
https://doi.org/10.1103/physrevb.66.161101