Zobrazeno 1 - 10
of 193
pro vyhledávání: '"Michael F. Reid"'
Publikováno v:
Optical Materials: X, Vol 15, Iss , Pp 100181- (2022)
We report a crystal-field analysis of Nd3+-doped KY3F10 nanocrystals. As well as electronic energy levels obtained from absorption and fluorescence, we fit to magnetic-field splittings for fields of up to 4T. The resulting parameters accurately accou
Externí odkaz:
https://doaj.org/article/d2f69edbab93493fa42c192353047712
Publikováno v:
Optical Materials: X, Vol 12, Iss , Pp 100112- (2021)
High-resolution infra-red spectra of KY3F10 nanoparticles doped with Nd3+and Er3+are measured in magnetic fields of up to 4T. A simple model of the magnetic splittings of the ground and excited states is used to show that the presence or absence of o
Externí odkaz:
https://doaj.org/article/a2754c07bd7c4ab2985840d57aa204fc
Autor:
Sangeetha Balabhadra, Michael F. Reid, Pratik S. Solanki, Jon-Paul R. Wells, Vladimir B. Golovko
Publikováno v:
ACS Applied Nano Materials. 4:5696-5706
Publikováno v:
Journal of Alloys and Compounds. 937:168394
Publikováno v:
Journal of Applied Physics. 133:035104
We report absorption, fluorescence, and thermometric studies of both (α) cubic and (β) hexagonal phase KYF4:Yb/Er nanoparticles. The cubic phase of KYF4:Yb/Er nanoparticles was achieved using a hydrothermal approach, and the cubic to hexagonal phas
Publikováno v:
Physical Review B. 104
We report on the development and application of a parametrized crystal-field model for both ${\mathrm{C}}_{1}$ symmetry centers in trivalent erbium-doped ${\mathrm{Y}}_{2}{\mathrm{SiO}}_{5}$. High-resolution Zeeman and temperature dependent absorptio
Publikováno v:
Journal of Luminescence. 251:119126
Autor:
Pratik S. Solanki, Sangeetha Balabhadra, Lara D. Browne, Michael F. Reid, Nathaniel J.L.K. Davis, Jon-Paul R. Wells
Publikováno v:
Optical Materials. 132:112783
Publikováno v:
Optics & Laser Technology. 150:107997
Publikováno v:
Physical Review B. 103
We present the full magnetic $g$ tensors of the $^{6}\mathrm{H}_{5/2}{\mathrm{Z}}_{1}$ and $^{4}\mathrm{G}_{5/2}{\mathrm{A}}_{1}$ electronic states for both crystallographic sites in ${\mathrm{Sm}}^{3+}$:${\mathrm{Y}}_{2}{\mathrm{SiO}}_{5}$, deduced