Yield Forecasting Across Semiconductor Fabrication Plants and Design Generations

Autor: Ali Ahmadi, John Carulli, Ke Huang, Bob Orr, Haralampos-G. Stratigopoulos, Amit Nahar, Yiorgos Makris, Michael F. Pas

Publikováno v: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, IEEE, 2017, 36 (12), pp.2120-2133. ⟨10.1109/TCAD.2017.2669861⟩
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2017, 36 (12), pp.2120-2133. ⟨10.1109/TCAD.2017.2669861⟩

International audience; Yield estimation is an indispensable piece of information at the onset of high-volume production of a device, as it can inform timely process and design refinements in order to achieve high yield, rapid ramp-up, and fast time-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58abd8a68d760a8ed2f53145dc671b2b
https://hal.archives-ouvertes.fr/hal-02980993/document

Harnessing process variations for optimizing wafer-level probe-test flow

Autor: Michael F. Pas, Constantinos Xanthopoulos, Ali Ahmadi, Bob Orr, Amit Nahar, Yiorgos Makris

Publikováno v: ITC

We propose a methodology for dynamically selecting an optimal probe-test flow which reduces test cost without jeopardizing test quality. The granularity of this decision is at the wafer-level and is made before the wafer reaches the probe station, ba

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3c0b255c896589eb8e301a1fc033648d
https://doi.org/10.1109/test.2016.7805835

Yield prognosis for fab-to-fab product migration

Autor: John Carulli, Bob Orr, Michael F. Pas, Amit Nahar, Ali Ahmadi, Yiorgos Makris, Ke Huang

Publikováno v: VTS

We investigate the utility of correlations between e-test and probe test measurements in predicting yield. Specifically, we first examine whether statistical methods can accurately predict parametric probe test yield as a function of e-test measureme

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6425b29897cfd85b82d1fb84063962c8
https://doi.org/10.1109/vts.2015.7116261

Effects of Drying Methods and Wettability of Silicon on the Formation of Water Marks in Semiconductor Processing

Autor: Michael F. Pas, Jin-Goo Park

Publikováno v: Journal of The Electrochemical Society. 142:2028-2031

In-line observation and classification of water marks after the drying process was investigated with regard to the wettability of wafers and the drying methods applied. The formation of water marks was observed with a KLA wafer inspection system and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a22ce81f7149751b4f31bf0fa56733c4
https://doi.org/10.1149/1.2044235

Computation of the transport coefficients of binary mixtures of argon-krypton, krypton-xenon, and argon-xenon by molecular dynamics

Autor: Bruno J. Zwolinski, Michael F. Pas

Publikováno v: Molecular Physics. 73:483-494

Molecular dynamics is used to compute the transport coefficients of binary mixtures of argon-krypton, argon-xenon and krypton-xenon in the liquid phase. The transport properties are the self diffusion coefficients, D 11, D 22; mututal diffusion coeff

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32cb392fde9653db20d1d723fdfd82ef
https://doi.org/10.1080/00268979100101331