Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Michael E. Kling"'
Autor:
Allen H. Gabor, Lars W. Liebmann, Xuemei Chen, Michael E. Kling, Daniel Schmidt, Obert Wood, Yulu Chen, Lei Sun, Francis Goodwin, Shuo Zhao, Feixiang Luo
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
Although lens aberrations in EUV imaging systems are very small, aberration impacts on pattern placement error and overlay error need to be carefully investigated to obtain the most robust lithography process for high volume manufacturing. Instead of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17a46888a07f1fbb6547ae382b20ce2f
https://doi.org/10.1117/12.2297027
https://doi.org/10.1117/12.2297027
Publikováno v:
Scientific Investigations Report.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9f68ae8c7448b9bb24b720b55351725
https://doi.org/10.3133/sir20055040
https://doi.org/10.3133/sir20055040
Autor:
Carla M. Nelson-Thomas, Ruoping Wang, Chong-Cheng Fu, Michael E. Kling, Matthew A. Thompson, Nigel Cave
Publikováno v:
SPIE Proceedings.
Gate patterning has always been held to tight specifications for CD variation compared to other layers. Specifically, the gate layer is more concerned with the total CD variations including Across Chip Linewidth Variation (ACLV), Across Wafer Linewid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe149292670e0402e3e3ee3076d4de6
https://doi.org/10.1117/12.435746
https://doi.org/10.1117/12.435746
Publikováno v:
SPIE Proceedings.
Standardizing on reticle size is critical for semiconductor tool manufacturers and the semiconductor industry as a whole. The advantages of large reticles are well known: larger die and increased throughput. Although predictions of extremely large di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7049f4dfb7964dec4ca00bf68d08b09
https://doi.org/10.1117/12.373319
https://doi.org/10.1117/12.373319
Autor:
Lloyd C. Litt, John A. Allgair, John L. Sturtevant, Chong-Cheng Fu, Robert R. Hershey, Kent G. Green, Bernard J. Roman, Michael E. Kling, Gary Stanley Seligman, Kevin D. Lucas, Mike Schippers
Publikováno v:
SPIE Proceedings.
It is well known that systematic within-chip dimension (CD) errors can strongly influence product yield and performance, especially in the case of microprocessors. It has been shown that this across chip linewidth variation (ACLV) dominates the CD er
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ccf75987451149665c26a91a1d59ed
https://doi.org/10.1117/12.354335
https://doi.org/10.1117/12.354335
Autor:
Linard Karklin, Chong-Cheng Fu, Nigel Cave, Alfred J. Reich, Drew R. Russell, John L. Sturtevant, Kevin D. Lucas, Ruiqi Tian, Bradley J. Falch, Kent G. Green, Michael E. Kling, Bernard J. Roman, Yao-Ting Wang
Publikováno v:
SPIE Proceedings.
It is becoming increasingly clear that semiconductor manufacturers must rise to the challenge of extending optical microlithography beyond what is forecast by the current SIA roadmap. Capabilities must be developed that allow the use of conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1238cd46bdee2c6a49b48a99dadca8da
https://doi.org/10.1117/12.354297
https://doi.org/10.1117/12.354297
Autor:
Warren D. Grobman, Paul G. Y. Tsui, Edward O. Travis, Kevin D. Lucas, Alfred J. Reich, Tam Vuong, Michael E. Kling, Percy V. Gilbert, H. Chuang, Jeff P. West, Bernard J. Roman
Publikováno v:
SPIE Proceedings.
Simplified 2-D Optical Proximity Correction (OPC) algorithms have been devised, calibrated and implemented on a state-of- the-art 0.25 micrometer random logic process in order to reduce metal line pullback on critical layers. The techniques used are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a0bbd340f655f0afb477edb6c6ffca2
https://doi.org/10.1117/12.310749
https://doi.org/10.1117/12.310749
Publikováno v:
SPIE Proceedings.
This paper uses simulation and experiment to study near resolution limit patterning of contacts and damascene trenches using conventional i-line lithography. Special attention is paid to the requirements for substrate control. The patterning behavior
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26bc939984799081e2f1c33997bb5abc
https://doi.org/10.1117/12.308748
https://doi.org/10.1117/12.308748
Autor:
Michael E. Kling
Publikováno v:
SPIE Proceedings.
Reticle cleanliness is becoming an ever more serious issue in today's sub-micron wafer fabrication facilities. Line-widths on reticle are at or pushing below one micron. The defined size of what is a "killer' defect has shrunk accordingly. The small
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bc18ef2d56f1d123360effd8285b3ce
https://doi.org/10.1117/12.262842
https://doi.org/10.1117/12.262842
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