Zobrazeno 1 - 10
of 334
pro vyhledávání: '"Michael E. Flatté"'
Autor:
Seth W. Kurfman, Andrew Franson, Piyush Shah, Yueguang Shi, Hil Fung Harry Cheung, Katherine E. Nygren, Mitchell Swyt, Kristen S. Buchanan, Gregory D. Fuchs, Michael E. Flatté, Gopalan Srinivasan, Michael Page, Ezekiel Johnston-Halperin
Publikováno v:
APL Materials, Vol 12, Iss 5, Pp 051115-051115-10 (2024)
We demonstrate indirect electric-field control of ferromagnetic resonance (FMR) in devices that integrate the low-loss, molecule-based, room-temperature ferrimagnet vanadium tetracyanoethylene (V[TCNE]x∼2) mechanically coupled to PMN-PT piezoelectr
Externí odkaz:
https://doaj.org/article/956cfd5d0c204436946c06728ea7534b
Autor:
Qin Xu, Hil Fung Harry Cheung, Donley S. Cormode, Tharnier O. Puel, Srishti Pal, Huma Yusuf, Michael Chilcote, Michael E. Flatté, Ezekiel Johnston‐Halperin, Gregory D. Fuchs
Publikováno v:
Advanced Science, Vol 11, Iss 14, Pp n/a-n/a (2024)
Abstract A cavity‐magnonic system composed of a superconducting microwave resonator coupled to a magnon mode hosted by the organic‐based ferrimagnet vanadium tetracyanoethylene (V[TCNE]x) is demonstrated. This work is motivated by the challenge o
Externí odkaz:
https://doaj.org/article/3c765797c0d54d30bb52289555097cc1
Autor:
Amanda H. Trout, Seth W. Kurfman, Yueguang Shi, Michael Chilcote, Michael E. Flatté, Ezekiel Johnston-Halperin, David W. McComb
Publikováno v:
APL Materials, Vol 10, Iss 8, Pp 081102-081102-9 (2022)
The molecule-based ferrimagnetic semiconductor vanadium tetracyanoethylene (V[TCNE]x, x ≈ 2) has garnered interest from the quantum information community due to its excellent coherent magnonic properties and ease of on-chip integration. Despit
Externí odkaz:
https://doaj.org/article/e2a4cccc3a29491a845ba14e54dcb53e
Autor:
Andrew Franson, Na Zhu, Seth Kurfman, Michael Chilcote, Denis R. Candido, Kristen S. Buchanan, Michael E. Flatté, Hong X. Tang, Ezekiel Johnston-Halperin
Publikováno v:
APL Materials, Vol 7, Iss 12, Pp 121113-121113-7 (2019)
Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication
Externí odkaz:
https://doaj.org/article/3f7ed60e54b844d2b705688883c4433a
Autor:
Denis R. Candido, Michael E. Flatté
Publikováno v:
PRX Quantum, Vol 2, Iss 4, p 040310 (2021)
We present a quantitative theory of the suppression of the optical linewidth due to charge fluctuation noise in a p-n diode, recently observed by Anderson et al. [Science 366, 1225 (2019)]. We connect the local electric field with the voltage across
Externí odkaz:
https://doaj.org/article/d58670b464df4a12bd54a7f2a33e9379
Publikováno v:
PRX Quantum, Vol 2, Iss 4, p 040314 (2021)
The ability to manipulate entanglement between multiple spatially separated qubits is essential for quantum-information processing. Although nitrogen-vacancy (NV) centers in diamond provide a promising qubit platform, developing scalable two-qubit ga
Externí odkaz:
https://doaj.org/article/c42fe9c098f147129ea846dbf5849b0e
Autor:
Michael E. Flatté
Publikováno v:
AIP Advances, Vol 7, Iss 5, Pp 055923-055923-7 (2017)
A major barrier to the development of spin-based electronics is the transition from current-driven spin torque, or magnetic-field-driven magnetization reversal, to a more scalable voltage-driven magnetization reversal. To achieve this, multiferroic m
Externí odkaz:
https://doaj.org/article/6d22d7171d6f463da0a67452bcf852ef
Autor:
Hailong Wang, James Kally, Cüneyt Şahin, Tao Liu, Wilson Yanez, Eric J. Kamp, Anthony Richardella, Mingzhong Wu, Michael E. Flatté, Nitin Samarth
Publikováno v:
Physical Review Research, Vol 1, Iss 1, p 012014 (2019)
Topological spintronics aims to exploit the spin-momentum locking in the helical surface states of topological insulators for spin-orbit torque devices. We address a fundamental question that still remains unresolved in this context: Does the topolog
Externí odkaz:
https://doaj.org/article/c72dc160024545fe98481de0002e1152
Publikováno v:
Physical Review X, Vol 6, Iss 1, p 011011 (2016)
As carriers slowly move through a disordered energy landscape in organic semiconductors, tiny spatial variations in spin dynamics relieve spin blocking at transport bottlenecks or in the electron-hole recombination process that produces light. Large
Externí odkaz:
https://doaj.org/article/8873ad2696c84b7f95081218d72fc7e3
Autor:
Hisashi Inoue, Adrian G. Swartz, Nicholas J. Harmon, Takashi Tachikawa, Yasuyuki Hikita, Michael E. Flatté, Harold Y. Hwang
Publikováno v:
Physical Review X, Vol 5, Iss 4, p 041023 (2015)
The observed magnetoresistance (MR) in three-terminal (3T) ferromagnet-nonmagnet (FM-NM) tunnel junctions has historically been assigned to ensemble dephasing (Hanle effect) of a spin accumulation, thus offering a powerful approach for characterizing
Externí odkaz:
https://doaj.org/article/c807562317714a46a9a4589ead02b62b