Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Michael E. Elta"'
Autor:
Hossein Etemad, B.A. Rashap, Demosthenis Teneketzis, J.P. Fournier, James S. Freudenberg, Jessy W. Grizzle, Stéphane Lafortune, Pramod P. Khargonekar, Fred L. Terry, Pierre T. Kabamba, Martin D. Giles, James Moyne, Michael E. Elta
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 8:286-297
This paper describes the development of real-time control technology for the improvement of manufacturing characteristics of reactive ion etchers. A general control strategy is presented. The principal ideas are to sense key plasma parameters, develo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ea4abd16c59540bae2c75a08182df87
https://doi.org/10.1109/66.401003
https://doi.org/10.1109/66.401003
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:1930-1934
Spatially resolved optical imaging experiments were performed in a parallel plate reactor known as the Gaseous Electronics Conference Reference Cell. They consisted of recording the optical emission discharges at various pressures and powers for 1024
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acb99c3de0dab56f4e78120e3175f751
https://doi.org/10.1116/1.579632
https://doi.org/10.1116/1.579632
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:1792-1796
Reactive ion etching is an important process in the fabrication of microelectronic devices. This article reports on work in progress towards developing a strategy for controlling sidewall profile during this process. In this strategy, a response surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0239eecf9bf7c39ce2de9219509f245
https://doi.org/10.1116/1.579770
https://doi.org/10.1116/1.579770
Publikováno v:
AIChE Journal. 41:658-665
The reactive ion etching kinetics of InP studied uses BCl3/Ar and BCl3/Ar/O2 as etchants. High-temperature etching using BCl3 and Ar increases the etch rate negligibly. However, the addition of 30% oxygen in the gas feed increases etch rates by a fac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afc64fb090be9d4d94a42f23b94dec25
https://doi.org/10.1002/aic.690410322
https://doi.org/10.1002/aic.690410322
Autor:
Mark J. Kushner, M. E. Riley, R. J. Van Brunt, J. B. Gerardo, G. Selwyn, Michael E. Elta, P. A. Miller, P. Bletzinger, D. B. Graves, James R. Whetstone, J. R. Torczynski, M. P. Splichal, Mark A. Sobolewski, A. Garscadden, J. T. P. Pender, R. A. Gottscho, J R. Roberts, James K. Olthoff, G. A. Hebner, Jeffery W. Butterbaugh, R. Horwath, K. E. Greenberg, P. J. Hargis, T. R. Turner, Mary L. Brake, M. L. Passow, John E. Heidenreich, J. L. Mock, H. M. Anderson, M. Dalvie, A. Lujan, J. T. Verdeyen, Herbert H. Sawin
Publikováno v:
Review of Scientific Instruments. 65:140-154
A “reference cell” for generating radio-frequency (rf) glow discharges in gases at a frequency of 13.56 MHz is described. The reference cell provides an experimental platform for comparing plasma measurements carried out in a common reactor geome
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2da0e571a794b356cbdea5bc78967343
https://doi.org/10.1063/1.1144770
https://doi.org/10.1063/1.1144770
Autor:
Fred L. Terry, E. G. Woelk, G. O. Munns, George I. Haddad, Michael E. Elta, Timothy J. Drummond, Marc E. Sherwin
Publikováno v:
Journal of Crystal Growth. 111:605-608
An electron cyclotron resonance (ECR) plasma system has been designed for the purpose of using an excited beam of gases during CBE growth. The system was designed to use hydrogen, nitrogen and argon. An ECR plasma system has the ability to ignite a l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d71f5820eb7b8eb118dd7443828ea4d
https://doi.org/10.1016/0022-0248(91)91048-f
https://doi.org/10.1016/0022-0248(91)91048-f
Autor:
Michael E. Elta, George I. Haddad, Fred L. Terry, Marc E. Sherwin, G. O. Munns, Selden B. Crary, E. G. Woelk
Publikováno v:
Journal of Crystal Growth. 111:594-598
Minimization of the number of experiments needed to fully characterize and optimize the growth of epitaxial material is the first important step in realizing state of the art device structures. While widely used in some fields such as chemical engine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07a172f99febd6749adb56d3e2275b9b
https://doi.org/10.1016/0022-0248(91)91046-d
https://doi.org/10.1016/0022-0248(91)91046-d
Publikováno v:
IEEE Transactions on Plasma Science. 19:158-162
A self-consistent particle model of an argon RF glow discharge has been developed. Electric field and charged-particle density profiles determined from simulations with the RF glow discharge model are consistent with results obtained from continuum m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c4bc3754a7d4cbaa5f5eb014aec74a
https://doi.org/10.1109/27.106809
https://doi.org/10.1109/27.106809
Publikováno v:
Journal of The Electrochemical Society. 138:1143-1146
A new etch technique which oscillates between sputter etching and RIE modes of etching was investigated. Extensive studies for GaAs using a BCl 3 /Ar gas system were performed with standard RIE equipment. The time period and sputter duty cycle are tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48db42c01f1c7095f7ce55518077de23
https://doi.org/10.1149/1.2085731
https://doi.org/10.1149/1.2085731
Publikováno v:
Journal of Applied Physics. 69:2885-2888
The relative concentration of atomic fluroine was measured in a CF4 rf glow discharge using the actinometric technique. The dependence of fluorine concentration on power, pressure and flow are presented and shown to be dependent upon reactor wall mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::354f1d8a68aaa8f6d0df73f3c450cd31
https://doi.org/10.1063/1.348597
https://doi.org/10.1063/1.348597