Zobrazeno 1 - 10
of 227
pro vyhledávání: '"Michael E. Coltrin"'
A guide to the theoretical underpinnings and practical applications of chemically reacting flow Chemically Reacting Flow: Theory, Modeling, and Simulation, Second Edition combines fundamental concepts in fluid mechanics and physical chemistry while h
Publikováno v:
Journal of Crystal Growth. 464:132-137
Growth rates and alloy composition of AlGaN grown by MOVPE is often very temperature dependent due to the presence of gas-phase parasitic chemical processes. These processes make wafer temperature measurement highly important, but in fact such measur
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:S3114-S3118
Autor:
Robert J. Kee, Michael E. Coltrin
Publikováno v:
International Journal of Heat and Mass Transfer. 102:122-132
This paper develops a unified analysis of stagnation flow heat and mass transport, considering both semi-infinite domains and finite gaps, with and without rotation of the stagnation surface. An important objective is to derive Nusselt- and Sherwood-
Autor:
Arthur J. Fischer, Xiaoyin Xiao, Michael E. Coltrin, Daniel D. Koleske, Jeffrey Y. Tsao, George T. Wang, Ping Lu
Publikováno v:
The Journal of Physical Chemistry C. 119:28194-28198
Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on su
Autor:
Ping Lu, Sadhvikas Addamane, Michael E. Coltrin, Xiaoyin Xiao, Benjamin Leung, Philip Rocco Miller, Gabriela A. Bran Anleu, Keshab R. Sapkota, Daniel D. Koleske, George T. Wang, Ganesh Balakrishnan, Jeffrey S. Nelson, Jeffrey Y. Tsao, François Léonard
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f391d89b8f11da1d2d1cc25a8a6f1b0
https://doi.org/10.2172/1474257
https://doi.org/10.2172/1474257
Autor:
Michael E. Coltrin, Ge Yuan, Jie Song, Miao-Chan Tsai, Yu Zhang, Jung Han, Benjamin Leung, Kanglin Xiong
Publikováno v:
Journal of Crystal Growth. 426:95-102
Here, we analyze the chemical vapor deposition of semiconductor crystals by selective area growth in a non-planar geometry. Specifically, the growth process in laterally and vertically confined masks forming single-crystal GaN on SiO 2 by metal-organ
Autor:
Daniel D. Koleske, Jeffrey Y. Tsao, Arthur J. Fischer, Ping Lu, George T. Wang, Michael E. Coltrin, Xiaoyin Xiao, Ronen Polsky
Publikováno v:
Electrochimica Acta. 162:163-168
We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using a narrowband laser with a linewidth less than ∼1 nm. In the initial stages of PEC etching, when the thin film is flat, charac
Publikováno v:
Chemically Reacting Flow ISBN: 9781119186304
Chemically Reacting Flow: Theory, Modeling, and Simulation
Chemically Reacting Flow: Theory, Modeling, and Simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7502700a9fb29f7abbfc2988de04a517
https://doi.org/10.1002/9781119186304.app5
https://doi.org/10.1002/9781119186304.app5
Publikováno v:
Chemically Reacting Flow ISBN: 9781119186304
Chemically Reacting Flow: Theory, Modeling, and Simulation
Chemically Reacting Flow: Theory, Modeling, and Simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7e9b673c65ec7f41f9453732f21411b
https://doi.org/10.1002/9781119186304.app1
https://doi.org/10.1002/9781119186304.app1