Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Michael E Levinshtein"'
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as
Autor:
Michael E Levinshtein
The Spirit of Russian Science comprises dozens of short and funny true stories about the relations between people working in science, the ways people of science interacted, and their attitudes towards life. On the one hand, these stories are very Rus
Autor:
Michael E Levinshtein, Grigory S Simin
This new book by M Levinshtein and G Simin tells the readers about the design and work of the most important and most interesting semiconductor devices — the transistors.The book is written in a friendly and easy to read manner and is meant primari
Autor:
Michael E. Levinshtein, Alexander A. Lebedev, Vitali V. Kozlovski, Dmitriy A. Malevsky, Roman A. Kuzmin, Gagik A. Oganesyan
Publikováno v:
Solid-State Electronics. 196:108405
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67f24fc1409a7c49fab51469f79871c9
https://doi.org/10.1016/j.sse.2022.108405
https://doi.org/10.1016/j.sse.2022.108405
Autor:
Alexander A. Lebedev, Pavel A. Ivanov, Michael E. Levinshtein, Evgenii N. Mokhov, Sergei S. Nagalyuk, Andrey N. Anisimov, Pavel G. Baranov
Publikováno v:
Uspekhi Fizicheskih Nauk. 189:803-848
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65f88c5626fa9e3622fe69c9933e36ee
https://doi.org/10.3367/ufnr.2018.10.038437
https://doi.org/10.3367/ufnr.2018.10.038437
Publikováno v:
Solid-State Electronics. 96:44-47
The 1/ f noise has been investigated for the first time at 300 and 77 K in high-quality 4H-SiC Schottky diodes. It is shown that, at 77 K, the dependence of the spectral noise density on current, S I ( I ), differs fundamentally between the cases of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd86c982b87df7c1db4738ac040befd4
https://doi.org/10.1016/j.sse.2014.03.008
https://doi.org/10.1016/j.sse.2014.03.008
Autor:
Michael E. Levinshtein, Anant K. Agarwal, Sergey Rumyantsev, Lin Cheng, Michael Shur, John W. Palmour
Publikováno v:
Materials Science Forum. :1021-1024
A 12 kV class 4H-SiC thyristor with a pilot thyristor (an amplification step) has been triggered to a current Imax = 1310 A in a mixed resistive-inductive load circuit. In order to further increase the Imax, the homogeneity of the initially turned-on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c07bdd9079eaecc9d9ee7b9d6382e9ef
https://doi.org/10.4028/www.scientific.net/msf.778-780.1021
https://doi.org/10.4028/www.scientific.net/msf.778-780.1021
Autor:
Sarit Dhar, Pavel Ivanov, Michael Shur, John W. Palmour, Sergey Rumyantsev, Michael E. Levinshtein, Anant K. Agarwal
Publikováno v:
Materials Science Forum. :1105-1108
4H-SiC MOSFETs with an epitaxial channel and NO postoxidation annealing have Si-like dependencies of noise on gate voltage. Such dependencies indicate that the density of the negatively charged oxide traps responsible for 1/f noise, Ntv, does not dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ff3a846d1dff258657229dfd6d2115a
https://doi.org/10.4028/www.scientific.net/msf.717-720.1105
https://doi.org/10.4028/www.scientific.net/msf.717-720.1105