Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Michael DiBattista"'
Autor:
Michael DiBattista, Jordan Furlong, Matthew Levesque, Thomas Harper, Christopher G.L. Ferri, Scott Silverman, Matthew M. Mulholland, Nathan Bakken
Publikováno v:
International Symposium for Testing and Failure Analysis.
Reproducible laser-assisted metal deposition with copper hexafluoroacetylacetonate trimethylvinylsilane Cu(hfac) (TMVS) has been demonstrated on a range of relevant semiconductor insulating material surfaces including silicon dioxide (SiO2), crystall
Autor:
Benhai Zhang, Daisy Lu, Scott Silverman, Daniel C. Nuez, Thomas Harper, Michael DiBattista, Phoumra Tan, Mark Lynaugh, Joshua Miller
Publikováno v:
International Symposium for Testing and Failure Analysis.
Sub-nanometer fabrication processes and advanced packaging solutions such as 2.5D stacked silicon interconnect technology (SSIT) facilitate the production of high-performance ICs, but make physical failure analysis and debugging more difficult. For e
Autor:
Michael DiBattista, Y. Shirley Meng, Pritesh Parikh, Corey Senowitz, Don Lyons, Arun Devaraj, I. Martin, Ty J. Prosa
Publikováno v:
Parikh, Pritesh; Senowitz, Corey; Lyons, Don; Martin, Isabelle; Prosa, Ty J; DiBattista, Michael; et al.(2017). Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs).. Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 23(5), 916-925. doi: 10.1017/s1431927617012491. UC San Diego: Retrieved from: http://www.escholarship.org/uc/item/1jb916ph
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, vol 23, iss 5
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, vol 23, iss 5
The semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorpora
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f40083ca3901c8b9a480d764bd26aebe
http://www.escholarship.org/uc/item/1jb916ph
http://www.escholarship.org/uc/item/1jb916ph
Publikováno v:
International Symposium for Testing and Failure Analysis.
Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. When the remaining silicon is reduced, some redistribution of stress is
Publikováno v:
Journal of nanoscience and nanotechnology. 15(12)
The efficient passage of electrical current from an external contact to a nanomaterial is necessary for harnessing characteristics unique to the nanoscale, such as those relevant to energy quantization. However, an intrinsic resistance pertinent to d
Publikováno v:
International Symposium for Testing and Failure Analysis.
Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. Ultra-thin RST enables VIS light techniques such as laser voltage probi
Autor:
Vladimir Brinzari, Alexei Vasiliev, Michael DiBattista, Johannes W. Schwank, Ghenadii Korotcenkov
Publikováno v:
Sensors and Actuators B: Chemical. 77:244-252
The analysis of the influence of deposition modes on the structure, electrical and gas sensitivity characteristics of SnO2 films, deposited by spray pyrolysis, is presented in this report. X-ray diffraction (XRD), scanning electron microscopy (SEM) a
Publikováno v:
Materials Science and Engineering: B. 77:33-39
The results of SnO 2 thin film structure characterization using X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy are presented in this report. We discuss the influence of film deposition conditions and modes of heat tr
Publikováno v:
Journal of Applied Physics. 86:4902-4907
Grain boundary diffusion of titanium through platinum thin films has been carried out in the temperature range from 200 to 600 °C. Five different platinum/titanium bilayer thicknesses, from 35 to 800 A Pt, were annealed in 5% O2/95% N2. The accumula