Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Michael Dammann"'
Autor:
Matthias Sinnwell, Philipp Doering, Rachid Driad, Michael Dammann, Michael Mikulla, Rudiger Quay
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c08ece880d61341d9ab51cb2fc25ab4
https://doi.org/10.1109/wipda49284.2021.9645137
https://doi.org/10.1109/wipda49284.2021.9645137
Autor:
Michael Dammann, Nicolai Gnoss, Pamela Kunert, Eike-Christian Ramcke, Tobias Schreier, Ulrike Steffens, Olaf Zukunft
Publikováno v:
Proceedings of Sixth International Congress on Information and Communication Technology ISBN: 9789811623790
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f23ed929fddd363e6d1b463f7ad120e
https://doi.org/10.1007/978-981-16-2380-6_82
https://doi.org/10.1007/978-981-16-2380-6_82
Autor:
M. Baeumler, Peter Brückner, Michael Dammann, Helmer Konstanzer, Michél Simon-Najasek, Andreas Graff, Sebastian Krause, Tobias Kemmer
Publikováno v:
IRPS
Degradation of 100 nm AlGaN/GaN HEMTs under DC and 10 GHz stress conditions has been compared and a promising median lifetime of more than 2000 h under RF stress in air at a drain voltage of 15 V and an average channel temperature of 230°C has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b48e9cdd23ba3cc2d00663ef4359513f
https://doi.org/10.1109/irps46558.2021.9405227
https://doi.org/10.1109/irps46558.2021.9405227
Autor:
Patrick Waltereit, Beatrix Weiss, Oliver Ambacher, Michael Dammann, Richard Reiner, Thomas Gerrer, Matthias Sinnwell, Stefan Moench, Dirk Meder, Rudiger Quay
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This work presents a Si-substrate removal technique for AlGaN/GaN devices on PCB carriers. The Si-removal method is explained and experimentally applied to PCB-embedded AlGaN/GaN-on-Si devices. The PCB-embedding package is reopened at the thermal pad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e562247997aaeb251b643f7f3691b6e0
https://doi.org/10.1109/ispsd46842.2020.9170078
https://doi.org/10.1109/ispsd46842.2020.9170078
Autor:
Oliver Ambacher, Vladimir Polyakov, M. Baeumler, Rudiger Quay, Michael Dammann, Tobias Kemmer, Peter Brückner, Helmer Konstanzer
Publikováno v:
IRPS
A systematic investigation of the effect of temperature and electric field on the degradation of 100 nm AlGaN/GaN HEMTs stressed under on- and off-state conditions has been carried out. The shape of the degradation behavior is analyzed and compared b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2250aebd64c0bc7156ae6a0ede8768ca
https://doi.org/10.1109/irps45951.2020.9128308
https://doi.org/10.1109/irps45951.2020.9128308
Autor:
Michael Dammann
Publikováno v:
Digitale Transformation von Dienstleistungen im Gesundheitswesen VII ISBN: 9783658266691
Dieser Beitrag beschaftigt sich mit der Einfuhrung der sogenannten MSV3-Bestellnorm im pharmazeutischen Groshandel und den damit verbundenen Vorteilen fur den Groshandel und deren Kunden auf der Apothekenebene. Es wird aufgezeigt, wie mit der branche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a3c2147a47e95161fd7a3726db0ff59
https://doi.org/10.1007/978-3-658-26670-7_8
https://doi.org/10.1007/978-3-658-26670-7_8
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this paper we report on the development of a 0.50 µm AlGaN/GaN on SiC technology optimized for 100-V operation. Load pull measurements reveal a power density of more than 17 W/mm and a power-added efficiency of 77.3 % at a frequency of 1.0 GHz an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7fbda63b09636ab6408f0f650c22c62
https://doi.org/10.1109/iedm19573.2019.8993632
https://doi.org/10.1109/iedm19573.2019.8993632
Autor:
Sebastian Krause, Maciej Cwiklinski, Dirk Schwantuschke, Stefano Leone, Rudiger Quay, Peter Brückner, Michael Mikulla, Tobias Kemmer, Michael Dammann
Publikováno v:
Web of Science
This paper gives the state-of-the-art (SOA) of the technological development and the reliability status of deep-submicron Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) with gate lengths of 100 nm or below. Several process technolog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1b8b531f2444279cf9e720281081ec8
https://doi.org/10.1109/iedm19573.2019.8993554
https://doi.org/10.1109/iedm19573.2019.8993554
Autor:
Beatrix Weiss, Oliver Ambacher, Michael Dammann, Patrick Waltereit, Stefan Moench, Richard Reiner, Rudiger Quay
Publikováno v:
2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
This work investigates a new approach of a multistage cascode. The concept is applied as intrinsic structure in an A1GaN/GaN-on-Si technology. The fabricated device achieves an off-state voltage >600 V and an on-state resistance of 14 Ω mm. A specia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c83f4401d4d6c65f54d161b487333e4
https://doi.org/10.1109/wipda.2018.8569168
https://doi.org/10.1109/wipda.2018.8569168
Autor:
Michael Dammann, Tobias Kemmer, Peter Brückner, Rudiger Quay, Helmer Konstanzer, Oliver Ambacher, M. Baeumler
Publikováno v:
2018 International Integrated Reliability Workshop (IIRW).
We investigated the voltage- and temperature -dependent degradation of AIN/GaN high electron mobility transistors with gate lengths of 70 nm and 100 nm. The devices under test were dc stressed in semi-on-state conditions at constant power dissipation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99940b8a40f0ad7c82beaad0e7d6e976
https://doi.org/10.1109/iirw.2018.8727092
https://doi.org/10.1109/iirw.2018.8727092