Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Michael D. Camras"'
Autor:
M. Craven, Michael D. Camras, Andrew Y. Kim, Frank M. Steranka, Anneli Munkholm, W. Götz, S. Watanabe, G. Chen
Publikováno v:
physica status solidi (a). 205:1086-1092
The performance of III-nitride based high-power light emitting diodes (LEDs) is reviewed. Direct color high-power LEDs with 1 × 1 mm2 chip size in commercial LUXEON® Rebel packages are shown to exhibit external quantum efficiencies at a drive curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed3ab59ee3fda410f681ad57f19b9669
https://doi.org/10.1002/pssa.200778747
https://doi.org/10.1002/pssa.200778747
Publikováno v:
Journal of Applied Physics. 90:4791-4795
Electrostatic force microscopy (EFM) with phase detection has been applied to cleaved cross sections of wafer-bonded transparent substrate (TS) AlGaInP light-emitting diode (LED) structures. EFM was performed with the LED under active bias to image t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aa9d32a0195890c40cf836e2afb259d
https://doi.org/10.1063/1.1406549
https://doi.org/10.1063/1.1406549
Autor:
M. G. Craford, S. L. Rudaz, Dennis C Defevere, Wayne L. Snyder, Frank M. Steranka, D. K. McElfresh, Lou W. Cook, Michael D. Camras
Publikováno v:
Journal of Electronic Materials. 24:1407-1412
Electroluminescent decay and internal quantum efficiency measurements are made as a function of temperature on two double heterostructure AIGaAs light emitting diodes (LEDs) that emit in the visible (red) portion of the spectrum. The electroluminesce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3257dfc74402e62fb01bb34e8f2c2af0
https://doi.org/10.1007/bf02655456
https://doi.org/10.1007/bf02655456
Autor:
F. A. Kish, I.-H. Tan, Dennis C Defevere, Gloria E Hofler, Frank M. Steranka, D. A. Vanderwater, Michael D. Camras
Publikováno v:
Applied Physics Letters. 69:803-805
The feasibility of wafer bonding 50‐nm diameter wafers consisting of GaP‐AlGaInP light‐emitting diode epitaxial films to GaP substrates is demonstrated. Wafer bonding over the entire wafer area is achieved while maintaining optical transparency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3524d64645b14a4be7bcaddad796521
https://doi.org/10.1063/1.117897
https://doi.org/10.1063/1.117897
Autor:
G.E. Hofler, Frank M. Steranka, Serge L Rudaz, A. J. Moll, S. A. Stockman, M. J. Ludowise, Jingxi Yu, J. Tarn, Steven A. Maranowski, Tim Osentowski, Lou W. Cook, Virginia M. Robbins, Dennis C Defevere, C. P. Kuo, Changhua Chen, M. G. Craford, M. J. Peanasky, Dan A. Steigerwald, Robert M Fletcher, K. G. Park, I. H. Tan, Frederick A. Kish, Michael D. Camras
Publikováno v:
Light-Emitting Diodes: Research, Manufacturing, and Applications.
A new class of LEDs based on the AlGaInP material system first became commercially available in the early 1990's. These devices benefit from a direct bandgap from the red to the yellow-green portion of the spectrum. The high efficiencies possible in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16dc2c200b6c7ab3e563974a8dfc5941
https://doi.org/10.1117/12.271032
https://doi.org/10.1117/12.271032
Akademický článek
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Publikováno v:
Journal of Applied Physics; 11/1/2001, Vol. 90 Issue 9, p4791, 5p, 1 Chart, 3 Graphs