Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Michael D. Bremser"'
Publikováno v:
physica status solidi (a). 183:151-155
A set of GaN epilayers grown by metalorganic chemical vapor deposition on 6H-SiC substrates was studied by time-resolved photoluminescence (PL) spectroscopy. The PL spectra are dominated by the free A exciton (FE A ) and by the neutral-donor-bound ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e1ad8f77b6736933eb80f2151059f3
https://doi.org/10.1002/1521-396x(200101)183:1<151::aid-pssa151>3.0.co
https://doi.org/10.1002/1521-396x(200101)183:1<151::aid-pssa151>3.0.co
Autor:
N. V. Edwards, Robert F. Davis, T. Wethkamp, Irina Buyanova, K. Wilmers, David E. Aspnes, S. D. Yoo, Norbert Esser, C. Cobet, Bo Monemar, A. D. Batchelor, Lynnette D. Madsen, Michael D. Bremser
Publikováno v:
Thin Solid Films. 364:98-106
Our work primarily concerns the characterization of wide-gap III-V nitride semiconductors, nondestructively and at variable temperature, with spectroscopic ellipsometry (SE) and reflectometry in the spectral range from 1.5 to 6 eV. In the case of GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8354da8af7f68e4872e410a33070feb
https://doi.org/10.1016/s0040-6090(99)00903-7
https://doi.org/10.1016/s0040-6090(99)00903-7
Autor:
Robert F. Davis, Irina Buyanova, N. V. Edwards, Hiroshi Amano, Weimin Chen, Michael D. Bremser, J. L. Lindström, Isamu Akasaki, Matthias Wagner, Bo Monemar
Publikováno v:
Physical Review B. 60:1746-1751
Photoluminescence (PL) spectroscopy is employed to determine the nature of a near-infrared PL emission with a no-phonon line at ∼0.88 eV, commonly present in electron-irradiated GaN. This PL emission is suggested to originate from an internal trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa5bd7e33296e64444b5b3aba3b4974d
https://doi.org/10.1103/physrevb.60.1746
https://doi.org/10.1103/physrevb.60.1746
Autor:
Philip Ryan, Kevin E. Smith, Michael D. Bremser, Y.-C. Chao, James E. Downes, D. Hanser, Robert F. Davis, Cristian Stagarescu
Publikováno v:
Physical Review B. 59:R15586-R15589
The electronic structure of {ital n}-type, Si-doped, wurtzite GaN(0001)1{times}1 surfaces has been studied using synchrotron radiation excited angle-resolved photoemission. The GaN thin films were grown by metal-organic chemical-vapor deposition on S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f02c2d9da72346c39912cb5c051dc44f
https://doi.org/10.1103/physrevb.59.r15586
https://doi.org/10.1103/physrevb.59.r15586
Autor:
Tsvetanka Zheleva, Darren B. Thomson, Andrew D. Hanser, Robert F. Davis, Thomas Gehrke, Okhyun Nam, Michael D. Bremser
Publikováno v:
Diamond and Related Materials. 8:288-294
Advancements in the doping of GaN and AlxGa1−xN thin films, and the growth of GaN and AlxGa1−xN structures on patterned heterostructure substrates via metalorganic vapor phase epitaxy are reported. The acceptor-type behavior of Mg-doped GaN films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8864e728085442e4ebcc0fcb1dbaa82a
https://doi.org/10.1016/s0925-9635(98)00341-0
https://doi.org/10.1016/s0925-9635(98)00341-0
Autor:
T. J. Schmidt, W. G. Perry, Jerzy S. Krasinski, W. Yang, B. Goldenberg, S. Bidnyk, B. D. Little, Yong-Hoon Cho, Robert F. Davis, J. J. Song, Michael D. Bremser
Publikováno v:
Journal of Applied Physics. 85:1792-1795
We report the results of an experimental study on stimulated and spontaneous emission from high-quality single-crystal GaN films grown on 6H-SiC and (0001) sapphire substrates in the temperature range of 300–700 K. We observed edge-emitted stimulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e9cc4169f353236448138fdd761680a
https://doi.org/10.1063/1.369325
https://doi.org/10.1063/1.369325
Autor:
N. V. Edwards, Michael D. Bremser, David E. Aspnes, Lynnette D. Madsen, A. D. Batchelor, Robert F. Davis, Bo Monemar, Irina Buyanova
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 4:423-428
We have developed a method to modulate the strain state (normally > 4 kbar, tensile) of moderately thick (∼2 μm) GaN based structures grown on 6H-SiC to a range 0 to -2 kbar of compressive stresses by introducing a strain-mediating layer (SML) abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d010d9697beba59f2a00ca48e624a6d
https://doi.org/10.1557/s1092578300002830
https://doi.org/10.1557/s1092578300002830
Autor:
Adam Barcz, Jakub Jasiński, Michael D. Bremser, Eliana Kamińska, Krystyna Gołaszewska, J. Kozubowski, Darren B. Thomson, Anna Piotrowska, Robert F. Davis
Publikováno v:
ResearcherID
Structural transformations in Ni/Si-based contacts to GaN occurring under heat treatment have been studied using transmission electron microscopy and secondary ion mass spectrometry. Transition from non-ohmic to ohmic behavior correlates with reactio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed0c7e8387bb7078bbd6192db7ecf88a
https://doi.org/10.1557/s1092578300003549
https://doi.org/10.1557/s1092578300003549
Autor:
Kieran Mark Tracy, Robert F. Davis, Robert J. Nemanich, J. P. Barnak, Sean W. King, Carsten Ronning, Michael D. Bremser
Publikováno v:
Journal of Applied Physics. 84:5248-5260
Successful ex situ and in situ cleaning procedures for AlN and GaN surfaces have been investigated and achieved. Exposure to HF and HCl solutions produced the lowest coverages of oxygen on AlN and GaN surfaces, respectively. However, significant amou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::332bc7ba4919c173e2ec4506eb2def75
https://doi.org/10.1063/1.368814
https://doi.org/10.1063/1.368814
Autor:
Robert F. Davis, R. Loesing, Dieter P. Griffis, W. G. Perry, D. A. Ricks, Okhyun Nam, Michael D. Bremser
Publikováno v:
Journal of Electronic Materials. 27:229-232
Thin films of Si-doped AlxGa1−xN (0.03≤x≤0.58) having smooth surfaces and strong near-band edge cathodoluminescence were deposited at 0.35–0.5 µm/h on on-axis 6H-SiC(0001) substrates at 1100°C using a 0.1 µm AlN buffer layer for electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d3c873e9499aef614a423cef1d7eb2
https://doi.org/10.1007/s11664-998-0392-9
https://doi.org/10.1007/s11664-998-0392-9