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pro vyhledávání: '"Michael Current"'
Autor:
Michael Current
Publikováno v:
Reference Services Review. 51:13-32
PurposeThis paper presents a novel approach to associating patron interactions with specific student learning objectives (SLOs) incorporated into reference transactions in an environment where learning, as opposed to usage or user satisfaction data,
UV-Photoreflectance and Raman Characterization of Strain Relaxation in Si on Silicon-Germanium Films
Autor:
Michael Current, Will Chism, Woo Sik Yoo, Victor Vartanian, David G. Seiler, Alain C. Diebold, Robert McDonald, Amal Chabli, Erik M. Secula
Publikováno v:
AIP Conference Proceedings.
Photoreflectance (PR), using a uv (374 nm) diode laser probe beam, and Raman spectroscopy, using a multi‐wavelength Ar+ laser coupled to a high‐resolution multi‐wavelength spectrometer, were used to characterize the strain relaxation of Si top
Autor:
John O. Borland, John Marino, Michael Current, Blake Darby, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki
Publikováno v:
AIP Conference Proceedings.
Boron 200 eV p+ USJ dopant activation and junction leakage was studied with various combinations of PAI (Ge, B36, In & Xe) and HALO (As & Sb) implantation using msec laser annealing between 1220 °C and 1350 °C. For B only case without PAI or HALO,
Publikováno v:
SPIE Proceedings.
Photo-reflectance (PR) provides an optical means for rapid and precise measurement of near-surface electric fields in semiconductor materials. This paper details the use of photo-reflectance to characterize dopant activation in ultra-shallow junction
Autor:
Jeffri Halim, Akira Mineji, Vladimir Faifer, Michael Current, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
High spatial resolution sheet resistance measurements, based on analysis of junction photo‐voltage (JPV) signals, are used to reveal subtle dose uniformity variations for 40 and 90 keV Boron implants in the dose range of 1011 B/cm2. The use of vari
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:C1C15-C1C20
Photoreflectance (PR) provides an optical means for rapid and precise measurement of near-surface electric fields in semiconductor materials. This article details the use of PR to characterize dopant activation in ultrashallow junction (USJ) structur
Autor:
Michael Current
Publikováno v:
MRS Bulletin. 20:58-58
Autor:
H. M. Gilder, Michael Current
Publikováno v:
Physical Review B. 16:2386-2391
Publikováno v:
Journal of the Air Pollution Control Association. 26:787-790
The emphasis on participate control from industrial processes has been shifted recently towards fine particulates, having diameters less than 3 microns. There exists an urgent need for more scientific information of fine particle characterization.1,2
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 21:v