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Autor:
Michael Claus Olsen, Amit Ranjan Trivedi, Shyam Parthasarathy, Ali Tombak, Yogesh Singh Chauhan, Michael Carroll, Robert A. Groves, D. Kerr, P. Mason, Saurabh Sirohi
Publikováno v:
VLSI Design
A single-pole double-throw novel switch device in0.18¹m SOI complementary metal-oxide semiconductor(CMOS) process is developed for 0.9 Ghz wireless GSMsystems. The layout of the device is optimized keeping inmind the parameters of interest for the R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9fcd8b148cebc77a0e5df3fb589307f
https://doi.org/10.1109/vlsi.design.2010.64
https://doi.org/10.1109/vlsi.design.2010.64
