Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Michael Canonico"'
Publikováno v:
ECS Transactions. 33:687-698
Top-down fabrication and characterization of vertically-stacked suspended strained-silicon nanowires (s-SiNWs) and Ge-shell/Si-core NWs are demonstrated. Epitaxially-grown strained-Si/relaxed-Si0.7Ge0.3 superlattice structures with up to 5 periods we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26b6119a9d486dff1f537f54fbcf7c9a
https://doi.org/10.1149/1.3487599
https://doi.org/10.1149/1.3487599
Autor:
Radek Roucka, John Kouvetakis, V. R. D'Costa, Andrew Chizmeshya, Jose Menendez, Michael Canonico, Y. J. An
Publikováno v:
Chemistry of Materials. 20:1431-1442
We present a comparative study of the structural, thermoelastic, and optical properties of ZrB2 films grown on silicon with the corresponding bulk ZrB2 behavior. Thick ZrB2 films (up to 500 nm) with device quality morphological and structural propert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f7a1242110dc33e0c11d63567db2175
https://doi.org/10.1021/cm702547p
https://doi.org/10.1021/cm702547p
Publikováno v:
Journal of Electronic Materials. 37:240-244
Ultrathin strained-Si/strained-Ge heterostructures on insulator have been fabricated using a bond and etch-back technique. The substrate consists of a trilayer of 9 nm strained-Si/4 nm strained-Ge/3 nm strained-Si on a 400-nm-thick buried oxide. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ec45c9cde478ec5aed9abe790c4696e
https://doi.org/10.1007/s11664-007-0337-8
https://doi.org/10.1007/s11664-007-0337-8
Publikováno v:
Semiconductor Science and Technology. 22:S55-S58
The Si–Ge interdiffusivity in epitaxial strained Si/Si1−yGey/strained Si/relaxed Si1−x0Gex0 and strained Si/relaxed Si1−x0Gex0 heterostructures is investigated for Ge fractions between 0 and 0.56 over the temperature range of 770–920 °C. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd8ba21ccb241e9de2b2eaa9cd8edcfa
https://doi.org/10.1088/0268-1242/22/1/s13
https://doi.org/10.1088/0268-1242/22/1/s13
Publikováno v:
ECS Transactions. 3:1211-1222
Device performance and reliability are of concern for devices fabricated on strained Si wafers. For strained Si formed by SiGe crystal growth, defects are of particular interest. We characterized such SiGe samples by pulsed MOS capacitor, gate oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::697449be54a03af3aeb64d72c139f732
https://doi.org/10.1149/1.2355916
https://doi.org/10.1149/1.2355916
Autor:
David Theodore, Xiaoru Wang, Cait Ni Chleirigh, Michael Canonico, Oluwamuyiwa Olubuyide, Yun Wang, Gana Rimple, Judy L. Hoyt
Publikováno v:
ECS Transactions. 3:355-362
Sub-melt temperature laser spike annealing is investigated as a low thermal budget solution for source/drain annealing in strained Si/ strained Si0.3Ge0.7/relaxed Si0.7Ge0.3 dual channel p-MOSFETs. A constant hole mobility enhancement factor of 4x is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a49e4c0e67ff84678bd04591f602c7
https://doi.org/10.1149/1.2356295
https://doi.org/10.1149/1.2356295
Autor:
Ran Liu, Michael Canonico
Publikováno v:
Microelectronic Engineering. 75:243-251
Raman spectroscopy (RS) and high-resolution X-ray diffraction (HRXRD) are two powerful non-destructive techniques commonly used to characterize micro-electronic materials and device structures. In the case of visible Raman spectroscopy, the technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf6daf1a1775a348df5a4798ae7412f0
https://doi.org/10.1016/j.mee.2004.06.004
https://doi.org/10.1016/j.mee.2004.06.004
Autor:
Candi S. Cook, Terry Daly, Ran Liu, Stefan Zollner, Michael Canonico, Qianghua Xie, Rich Gregory
Publikováno v:
Thin Solid Films. :794-797
Spectroscopic ellipsometry, scanning electron microscopy, and transmission electron microscopy are all invaluable routine characterization techniques to determine the thickness of silicon nitrides during manufacturing of compound semiconductor device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c59907a27c1707f7c8b652083f2c618
https://doi.org/10.1016/j.tsf.2003.11.265
https://doi.org/10.1016/j.tsf.2003.11.265
Publikováno v:
2009 IEEE International Conference on IC Design and Technology.
In this paper, we will present Micro Raman stress data of Through Silicon Vias (TSV) with different shapes and sizes & spacing, and discuss design considerations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e78ee755d326d31b2f330bf5ad2bf93
https://doi.org/10.1109/icicdt.2009.5166260
https://doi.org/10.1109/icicdt.2009.5166260
Publikováno v:
2008 IEEE International Electron Devices Meeting.
The intrinsic performance and electron effective mobility of uniaxially strained-Si gate-all-around (GAA) NanoWire (NW) n-MOSFETs are investigated, for the first time. Suspended strained-Si NWs show very high stress (up to ~2.1 GPA) as confirmed by R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ddcf44f458daeb61fda585861418252
https://doi.org/10.1109/iedm.2008.4796835
https://doi.org/10.1109/iedm.2008.4796835