Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Michael C. Tipton"'
Publikováno v:
SPIE Proceedings.
We have investigated the use of annular illumination on a KrF excimer laser stepper ((lambda) equals 248 nm) working near the resolution limit of the lens. The numerical aperture of the lens was 0.48 and the illuminator-lens combination produced a pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d04b28fef5a701fc564560980cf2067
https://doi.org/10.1117/12.150421
https://doi.org/10.1117/12.150421
Autor:
Maureen A. Hanratty, Michael C. Tipton
Publikováno v:
SPIE Proceedings.
Deep UV lithography is an enabling technology for the fabrication of 64 megabit DRAM class devices. Wafer steppers operating at 248 nm currently provide both the resolution and the overlay capability to meet the stringent reguirements imposed by next
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0b94824be9409eb6c156dd53148f413
https://doi.org/10.1117/12.130331
https://doi.org/10.1117/12.130331
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1749
This paper discusses the use of surface imaging lithography for deep UV step and repeat applications. In particular, results obtained using the DESIRE process are presented. It is shown that surface imaging is a very attractive option for 248 nm lith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b92ee054e022a83776bf182d87e16bc
https://doi.org/10.1116/1.585152
https://doi.org/10.1116/1.585152
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1740
This paper discusses the application of a deep wafer stepper and associated photoresist systems to advanced semiconductor processing. It is shown that, even with the limited number of photoresists available, deep UV lithography is a viable candidate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbbbd83007e196fa5bdcf70309c810ad
https://doi.org/10.1116/1.585150
https://doi.org/10.1116/1.585150
Publikováno v:
Advances in Resist Technology and Processing VI.
The standard Rayleigh relation for the resolution of an optical system states that the resolution is proportional to the exposure wavelength divided by the numerical aperture of the system. The constant of proportionality "k" is directly effected by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0197c8994cdbaede95e624580edf4088
https://doi.org/10.1117/12.953054
https://doi.org/10.1117/12.953054
Publikováno v:
SPIE Proceedings.
A method of stepper lens evaluation has been developed which utilizes a simple resolution test pattern of the type usually supplied with the stepper. Measurements are made using an automated field emission SEM equipped to perform whole wafer non-dest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7df7d8c9d897b4ae4160620990518ec2
https://doi.org/10.1117/12.968352
https://doi.org/10.1117/12.968352