Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Michael Ben-Yishai"'
Autor:
A. Ngai, C. Toma, Junji Miyazaki, Brid Connolly, J. van Praagh, Ilan Englard, Yosuke Kojima, Yaron Cohen, Karine Jullian, Kees Grim, Masaru Higuchi, Michael Ben Yishai, Jo Finders, Shmoolik Mangan, Orion Mouraille, Anita Bouma
Publikováno v:
SPIE Proceedings.
In this paper we compare the imaging properties of lithographic test structures formed on test masks with different reticle absorbers for use in1.35 NA immersion lithography. We will look into different aspects like process windows and CD fingerprint
Autor:
Michael Ben Yishai, Sunghyun Oh, Yulian Wolff, Inpyo Kim, Changreol Kim, Aviram Tam, DaeHo Hwang
Publikováno v:
SPIE Proceedings.
Advanced photomasks exploit complex patterns that show little resemblance to the target printed wafer pattern. The main mask pattern is modified by various OPC and SRAF features while further complexity is introduced as source-mask-optimization (SMO)
Autor:
Michael Ben Yishai, Jo Finders, Marcel Demarteau, Ilan Englard, Shmoolik Mangan, Netanel Polonsky, Ziv Parizat, Shay Attal, Frank Duray, Ingrid Minnaert Janssen, Yaron Cohen, Onno Wismans, Yair Elblinger
Publikováno v:
SPIE Proceedings.
Scanner introduction into the fab production environment is a challenging task. An efficient evaluation of scanner performance matrices during factory acceptance test (FAT) and later on during site acceptance test (SAT) is crucial for minimizing the
Autor:
Wei-Guo Lei, Joan McCall, Rajesh Nagpal, Jun Kim, Vivek Balasubramanian, Mark Wagner, Udy Danino, Suheil J. Zaatri, Michael Ben-Yishai, Lev Faivishevsky, Tejas H. Shah, Shmoolik Mangan, Michael Penn, Oded Dassa, Aviram Tam
Publikováno v:
SPIE Proceedings.
Die-to-Model (D2M) inspection is an innovative approach to running inspection based on a mask design layout data. The D2M concept takes inspection from the traditional domain of mask pattern to the preferred domain of the wafer aerial image. To achie
Autor:
Netanel Polonsky, Ingrid Minaert Janssen, Marcel Demarteau, Onno Wissmans, Yaron Cohen, Ziv Parizat, Tal Verdene, Yair Elblinger, Shmoolik Mangan, Michael Ben Yishai, Jo Finders, Lev Faivishevsky, Frank Duray, Ilan Englard
Publikováno v:
SPIE Proceedings.
Scanner performance is influenced by the quality of its illumination, mechanical and optical elements and the impact of these factors on the printed wafer. Isolation of the aggregated scanner errors from other sources of error on the printed wafer is
Autor:
Jo Finders, Ingrid Minnaert-Janssen, Rachel Ren, Paul Frank Luehrmann, Ryan Gibson, Craig Hickman, Frank Duray, Robert Kazinczi, Nicole Schoumans, Lior Shoval, Baukje Wisse, Yair Elblinger, Yaron Cohen, Liesbeth Reijnen, Michael Ben-Yishai, Merri L. Carlson, Dan Rost, Ilan Englard, Shmoolik Mangan, Thomas Theeuwes, Michael B. Garrett, Erik Byers
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
The extension of ArF lithography through reduced k1, immersion and double patterning techniques makes lithography a difficult challenge. Currently, the concept of simple linear flow from design to functional photo-mask is being replaced by a more com
Autor:
Yair Elblinger, Michael Ben-Yishai, Lior Shoval, Neil Berns, Shay Attal, Shmoolik Mangan, Yaron Cohen, Ilan Englard
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
The economy of wafer fabs is changing faster for 3x geometry requirements and below. Mask set and exposure tool costs are almost certain to increase the overall cost per die requiring manufacturers to develop productivity and yield improvements to de
Publikováno v:
SPIE Proceedings.
Aggressive line width and other features of interest in advanced-technology node desi gns are achieved by using pattern-related resolution enhancement techniques (RET) coupled with mask transmission effects. Mask transmission effects, such as phase s
Publikováno v:
SPIE Proceedings.
The aerial images of modern photomasks are highly susceptible to CD errors, owing to the high MEEF values characteristic of the low-k 1 regime. The requirement for tight wafer CD control thus places stringent constraints on mask errors. Nevertheless,
Autor:
Lior Shoval, Byung-Gook Kim, Christophe Couderc, Hee-Bom Kim, Young-su Sung, Sukho Lee, Myoung-Soo Lee, Sang-Gyun Woo, Michael Ben Yishai, Han-Ku Cho
Publikováno v:
SPIE Proceedings.
Lithographic process steps used in today's integrated circuit production require tight control of critical dimensions (CD). With new design rules dropping to 32 nm and emerging double patterning processes, parameters that were of secondary importance