Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Michael Ben Yishay"'
Towards 22 nm: fast and effective intra-field monitoring and optimization of process windows and CDU
Autor:
Christopher S. Ngai, Orion Mouraille, Christopher Dennis Bencher, Kfir Dotan, Michael Ben Yishay, Amir Sagiv, Yaron Cohen, Evert Mos, Huixiong Dai, Shmoolik Mangan, Roel Knops, Frank Duray, Alexander Kremer, Ilan Englard, Ingrid Minnaert-Janssen, Jo Finders
Publikováno v:
SPIE Proceedings.
ITRS lithography's stringent specifications for the 22nm node are a major challenge for the semiconductor industry. With the EUV point insertion at 16nm node, ArF lithography is expected to reach its fundamental limits. The prevailing view of holisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ff0681e2d45c833bc3c4709805f4507
https://doi.org/10.1117/12.881657
https://doi.org/10.1117/12.881657
Publikováno v:
SPIE Proceedings.
The allowable wafer Critical Dimension Uniformity (CDU) budget of the 2x node poses stringent requirements on mask induced errors at wafer level. The total CDU budget of 2 nm which is partially consumed by across wafer and field process and imaging v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a372b5fd72889dbd1cbf2ad1c7fc5fd
https://doi.org/10.1117/12.864362
https://doi.org/10.1117/12.864362