Výsledky vyhledávání - "Michael Barget"

Strain Engineering in Highly Mismatched SiGe/Si Heterostructures

Autor: Giovanni Isella, Philippe Niedermann, Fabio Isa, Fabio Pezzoli, Hans von Känel, Pierangelo Gröning, Olha Sereda, Yadira Arroyo Rojas Dasilva, Mojmír Meduňa, Emiliano Bonera, Marco Salvalaglio, Anna Marzegalli, Francesco Montalenti, Michael Barget, Arik Jung, Ivan Marozau, Rolf Erni

Publikováno v: Materials Science in Semiconductor Processing. 70:117-122

In this work we present an innovative approach to realise coherent, highly-mismatched 3-dimensional heterostructures on substrates patterned at the micrometre-scale. The approach is based on the out-of-equilibrium deposition of SiGe alloys graded at

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::248d45b86b824283d80aacf5e13efed7
https://doi.org/10.1016/j.mssp.2016.08.019

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Strain in Si or Ge from the edge forces of epitaxial nanostructures

Autor: Monica Bollani, Mario Lodari, Daniel Chrastina, Michael Barget, Emiliano Bonera, Jacopo Frigerio, Valeria Mondiali

Publikováno v: Nanoscience and nanotechnology letters
9 (2017): 1128–1131. doi:10.1166/nnl.2017.2449
info:cnr-pdr/source/autori:Lodari, M.; Chrastina, D.; Mondiali, V.; Barget, M. R.; Frigerio, J.; Bonera, E.; Bollani, M./titolo:Strain in Si or Ge from the Edge Forces of Epitaxial Nanostructures/doi:10.1166%2Fnnl.2017.2449/rivista:Nanoscience and nanotechnology letters (Print)/anno:2017/pagina_da:1128/pagina_a:1131/intervallo_pagine:1128–1131/volume:9

The introduction of strain in semiconductors is a well-known technique exploited in microelectronics to increase their mobility and thus to enhance the performance of silicon-based electronic devices. Moreover, tensile strain is one feasible route to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc20df0bd1b6da3ac7ab3ea379598b4d
http://hdl.handle.net/11311/1032847

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Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)

Autor: Wolfgang M. Klesse, Giovanni Capellini, H. von Känel, Oliver Skibitzki, Peter Zaumseil, Gang Niu, Thomas Schroeder, Yuji Yamamoto, Viktoria Schlykow, Noriyuki Taoka, Michael Barget, M. A. Schubert

In this letter, we explore in detail the potential of nanoheteroepitaxy to controllably fabricate high quality GeSn nano-structures and to further improve the crystallinity of GeSn alloys directly grown on Si(001). The GeSn was grown by molecular bea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::996d30ce86075461a8230fe42bc00f98
https://hdl.handle.net/11590/315542

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Tensile strain in Ge membranes induced by SiGe nanostressors

Autor: Daniel Chrastina, Valeria Mondiali, Emiliano Bonera, Michael Barget, Mauro Borriello, Monica Bollani, Mario Lodari

Publikováno v: Applied physics letters 109 (2016). doi:10.1063/1.4963657
info:cnr-pdr/source/autori:Barget M.R.; Lodari M.; Borriello M.; Mondiali V.; Chrastina D.; Bollani M.; Bonera E./titolo:Tensile strain in Ge membranes induced by SiGe nanostressors/doi:10.1063%2F1.4963657/rivista:Applied physics letters/anno:2016/pagina_da:/pagina_a:/intervallo_pagine:/volume:109

The monolithic integration of photonic functionality into silicon microtechnology is widely advanced. Yet, there is no final solution for the realization of a light source compatible with the prevailing complementary metal-oxide-semiconductor technol

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8bca7d7759ba02056b16f2456165acb4
http://www.cnr.it/prodotto/i/360307

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Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures

Autor: Fabio Isa, Marco Salvalaglio, Rolf Erni, Thomas Kreiliger, Mojmír Meduňa, Emiliano Bonera, Philippe Niedermann, Pierangelo Gröning, Fabio Pezzoli, Hans von Känel, Arik Jung, Yadira Arroyo Rojas Dasilva, Francesco Montalenti, Giovanni Isella, Michael Barget

Publikováno v: Advanced Materials

An experiment has demonstrated that truly dislocation free SiGe crystals with widths of at least 5μm can be epitaxially grown on Si substrates by applying the compositional grading developed for layers to 3D structures. At such crystal widths, the e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e83a65351b92483459b483219136920
https://pubmed.ncbi.nlm.nih.gov/26829168

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Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures

Autor: Luca Gagliano, Daniel Chrastina, Fabio Pezzoli, Jacopo Frigerio, Monica Bollani, Mario Lodari, Emiliano Bonera, Lidia Rossetto, Michael Barget, Francesco Montalenti, Valeria Mondiali, Daniele Scopece

Publikováno v: Applied physics letters 107 (2015): 083101-1–083101-5. doi:10.1063/1.4928981
info:cnr-pdr/source/autori:Bollani Monica; Chrastina Daniel; Gagliano Luca; Rossetto Lidia; Scopece Daniele; Barget Michael; Mondiali Valeria; Frigerio Jacopo; Lodari Mario; Pezzoli Fabio; Montalenti Francesco; Bonera Emiliano/titolo:Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures/doi:10.1063%2F1.4928981/rivista:Applied physics letters/anno:2015/pagina_da:083101-1/pagina_a:083101-5/intervallo_pagine:083101-1–083101-5/volume:107

We show that a relatively simple top-down fabrication can be used to locally deform germanium in order to achieve uniaxial tensile strain of up to 4%. Such high strain values are theoretically predicted to transform germanium from an indirect to a di

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c7ba536cf10f8f75d2d1a31c1539d36
http://hdl.handle.net/10281/88200

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