Zobrazeno 1 - 10 of 42 pro vyhledávání: '"Michael B. Power"'
1
New ruthenium–tin clusters with bulky ligands. Crystal and molecular structures of [Ru2(CO)6(µ-SnR2)(µ-Ph2PCH2PPh2)], [Ru3(CO)9(µ-SnR′2)3], [Ru3(CO)9(µ-SnR2)(µ-SnR′2)2] and [Ru3(CO)9(µ-SnR2)2(µ-SnR′2)][R = CH(SiMe3)2, R′= C6H2Pri3-2,4,6]
Autor: Maire A. Convery, Michael Devereux, Dieter Fenske, Christine J. Cardin, Zbigniew Dauter, David J. Cardin, Michael B. Power
Publikováno v: J. Chem. Soc., Dalton Trans.. :1133-1144
The first heterometallic clusters containing the SnR′2(R′= 2,4,6-triisopropylphenyl) moiety have been prepared. Triruthenium dodecacarbonyl reacted at low temperatures with SnR′2 or, at higher temperatures, with its trimer (SnR′2)3 to give bo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4033ad889ef579af17867fbf7e20b514
https://doi.org/10.1039/dt9960001133
Zobrazit plný text záznamu
2
New cubane MOCVD precursors for gallium sulphide and gallium selenide: Synthesis of [(Et2MeC)GaS]4 and [(Me2EtC)GaS]4: Structural determinations of [(Et2MeC)GaS]4 by X-ray diffraction and [(tBu)GaSe]4 by electron diffraction
Autor: Michael B. Power, Andrew R. Barron, Heather E. Robertson, Drahomír Hnyk, David W. H. Rankin
Publikováno v: Advanced Materials for Optics and Electronics. 5:177-185
The gallium sulphide cubane compounds [(Me2EtC)GaS]4 and [(Et2MeC)GaS]4, have been synthesised, and their potential as MOCVD precursors for GaS is discussed. The molecular structure of [(Et2MeC)GaS]4 has been determined by X-ray diffraction. In addit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f728fbd51b5b4b2947989acbc81b0905
https://doi.org/10.1002/amo.860050306
Zobrazit plný text záznamu
6
Indium tert-butylthiolates as single source precursors for indium sulfide thin films: Is molecular design enough?
Autor: Andrew N. MacInnes, Aloysius F. Hepp, Andrew R. Barron, Michael B. Power
Publikováno v: Journal of Organometallic Chemistry. 449:95-104
The dimeric indium thiolates [R2In(μ-StBu)]2 R  tBu (1), nBu (2), Me (3), and [(tBuS)MeIn(μ-St Bu)]2 (4) have been synthesized and used as single source precursors for the metal-organic chemical vapor deposition (MOCVD) of In/InS and InS thin fi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::94be919675ffe288f2745eb8dbbdaa2a
https://doi.org/10.1016/0022-328x(93)80111-n
Zobrazit plný text záznamu
10
ChemInform Abstract: Oxidation and Hydrolysis of Tris-tert-butylgallium
Autor: Joseph W. Ziller, William M. Cleaver, Allen W. Apblett, Michael B. Power, Andrew R. Barron
Publikováno v: ChemInform. 23
The oxidation of GaBu3t with oxygen leads to the formation of [Bu3tGa(μ-OOBut)]2 (1). The thermolysis of 1 yields the alkoxide complex [Bu2tGa(μ-OBut)]2 (2), which may also be prepared directly from GaBu3t and ButOH. The reaction of [ButGaCl(μ-Cl)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bae833bae643b57b128e6d07c86f61da
https://doi.org/10.1002/chin.199228237
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje