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pro vyhledávání: '"Michael Antcliffe"'
Autor:
Jeong Moon, Nivedhita Venkatesan, Joel Wong, Isaac Khalaf, Patrick Fay, Bob Grabar, Peter Chen, Erdum Arkun, Michael Antcliffe, David Fanning
Publikováno v:
BCICTS
GaN-based HEMTs are attractive devices for RF, microwave, and millimeter-wave applications, with excellent power and noise figure performance having been demonstrated. Recently, graded-channel structures have been explored for their potential to impr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43680b4ed0ea89295618db6d6081b04f
https://doi.org/10.1109/bcicts48439.2020.9392987
https://doi.org/10.1109/bcicts48439.2020.9392987
