Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Michael Angerbauer"'
Autor:
Jingsi Wei, Mingjia Liu, Michael Angerbauer, Qirui Yang, Hanjun Xu, Michael Grill, André Kulzer, Ceyuan Chen
Publikováno v:
SAE Technical Paper Series.
High-efficient simulations are mandatory to manage the ever-increasing complexity of automotive powertrain system and reduce development time and costs. Integrating AI methods into the development process provides an ideal solution thanks to massive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13be6983effa76309d1293143d8b7647
https://doi.org/10.4271/2023-01-0194
https://doi.org/10.4271/2023-01-0194
Autor:
Sasa Milojevi, Sebasian Bodza, Valerian Cimniak, Michael Angerbauer, Dominik Rether, Michael Grill, Michael Bargende
Publikováno v:
SAE Technical Paper Series.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84eb7333fad4d0d68e2312a2713518b1
https://doi.org/10.4271/2022-01-0158
https://doi.org/10.4271/2022-01-0158
Autor:
Melissa Pender, Sankar Swaminathan, Elena G. Gibson, Craig S. Cook, Michael Angerbauer, Emily S Spivak, Barbara E. Jones, Adam M. Spivak
Publikováno v:
Open Forum Infectious Diseases
We describe a case of prolonged severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) infection in a patient receiving ocrelizumab for multiple sclerosis. Viral RNA shedding, signs, and symptoms persisted for 69 days with resolution after admi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94d708c4298e6000a747fd913ffd81ba
https://doi.org/10.1093/ofid/ofab176
https://doi.org/10.1093/ofid/ofab176
Autor:
Michael Kund, Heinz Hoenigschmid, L. Altimime, Ralf Symanczyk, D. Gogl, G. Mueller, Michael Markert, Corvin Liaw, S. Bournat, Stefan Dietrich, Michael Angerbauer, Milena Ivanov
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:839-845
A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD=1.5 V process technology. The presented design uses an 8F2 (0.0648 mum2) 1T1CBJ (1-Transistor/1-Conductive Bridging Junction) cell and introduces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41cb722e03cf911a997612774aadb503
https://doi.org/10.1109/jssc.2007.892207
https://doi.org/10.1109/jssc.2007.892207
Autor:
Corvin Liaw, Peter Schrögmeier, G. Muller, S. Bournat, Stefan Dietrich, Ralf Symanczyk, Michael Markert, Heinz Hönigschmid, Michael Angerbauer, L. Altimime, Milena Ivanov
Publikováno v:
2007 IEEE Symposium on VLSI Circuits.
Multilevel read/write circuits developed for a 90 nm, 4F2, 1T1CBJ (1-transistor/1-conductive bridging junction) 4Mb CBRAM core are described for the first time. The design uses an on-pitch time-discrete voltage sensing scheme and employs a bitline (B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbc843f0aaec88c42212b4d7058daf0f
https://doi.org/10.1109/vlsic.2007.4342708
https://doi.org/10.1109/vlsic.2007.4342708
Autor:
Heinz Hönigschmid, L. Altimime, Michael Angerbauer, D. Gogl, G. M¿ller, M. Markert, Corvin Liaw, Milena Dimitrova, S. Bournat, R. Symanczyk, S. Dietrich
Publikováno v:
2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers..
A 2Mbit CBRAM (conductive bridging random access memory) core has been developed utilizing a 90nm, VDD = 1.5V process technology. The presented design uses an 8F2 (0.0648mum2) 1T1CBJ (1-transistor/1-conductive bridging junction) cell and introduces a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f943cd3619d8db51d515b2dc0509f76c
https://doi.org/10.1109/vlsic.2006.1705334
https://doi.org/10.1109/vlsic.2006.1705334