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pro vyhledávání: '"Michael A. Shinosky"'
Autor:
Charles W. Griffin, Dinesh Badami, David G. Brochu, Ernest Y. Wu, Michael A. Shinosky, W. Liu, Fernando Guarin, Roger A. Dufresne
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
In this work, we report for the first time the experimental evidence of layout dependence on gate dielectric time-dependent-dielectric-breakdown TDDB in a leading edge HKMG FinFET technology. Structures with identical total effective gate area but va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9038c94ecf47529eeca87c561f073f7a
https://doi.org/10.1109/irps.2016.7574575
https://doi.org/10.1109/irps.2016.7574575
