Zobrazeno 1 - 10
of 201
pro vyhledávání: '"Michael A. Scarpulla"'
Autor:
Nathan D. Rock, Haobo Yang, Brian Eisner, Aviva Levin, Arkka Bhattacharyya, Sriram Krishnamoorthy, Praneeth Ranga, Michael A. Walker, Larry Wang, Ming Kit Cheng, Wei Zhao, Michael A. Scarpulla
Publikováno v:
APL Materials, Vol 12, Iss 8, Pp 081101-081101-11 (2024)
Diffusion of native defects such as vacancies and their interactions with impurities are fundamental to semiconductor crystal growth, device processing, and design. However, the transient equilibration of native defects is difficult to directly measu
Externí odkaz:
https://doaj.org/article/455c62017cc149bb9b37a80ff5dfd43a
Autor:
Jacqueline Cooke, Praneeth Ranga, Jani Jesenovec, John S. McCloy, Sriram Krishnamoorthy, Michael A. Scarpulla, Berardi Sensale-Rodriguez
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract In this work, a systematic photoluminescence (PL) study on three series of gallium oxide/aluminum gallium oxide films and bulk single crystals is performed including comparing doping, epitaxial substrates, and aluminum concentration. It is o
Externí odkaz:
https://doaj.org/article/628595c80e6642d0b25df703d85053a3
Electron–phonon effects and temperature-dependence of the electronic structure of monoclinic β-Ga2O3
Publikováno v:
APL Materials, Vol 11, Iss 1, Pp 011106-011106-7 (2023)
Gallium oxide (Ga2O3) is a promising semiconductor for next-generation high-power electronics due to its ultra-wide bandgap and high critical breakdown field. To utilize its unique electrical properties for real-world applications, an accurate descri
Externí odkaz:
https://doaj.org/article/eaa32aca4a004a7db9b7810716b23de3
Autor:
Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh, Saurav Roy, Michael A. Scarpulla, Kelvin G. Lynn, Sriram Krishnamoorthy
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 286-294 (2020)
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of β-Ga2O3 by insertion of an ultra-thin SiO2 dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-lev
Externí odkaz:
https://doaj.org/article/a4ce420c2cc2499a91d62fe3f974f1d9
Publikováno v:
APL Materials, Vol 2, Iss 1, Pp 012110-012110-6 (2014)
Native defects are ubiquitous especially in compound semiconductors and dominate the properties of many materials. Applying first principles calculations, we propose a novel strategy to tune native defect populations in Cu2ZnSn(S,Se)4 which is an eme
Externí odkaz:
https://doaj.org/article/cc904910875c459e92abd3b0fd8cf936
Publikováno v:
IEEE Electron Device Letters. 44:725-728
Autor:
Ayobami S. Edun, Cody LaFlamme, Samuel R. Kingston, Cynthia M. Furse, Michael A. Scarpulla, Joel B. Harley
Publikováno v:
IEEE Sensors Journal. 22:3484-3492
Autor:
Michael A. Scarpulla, Brian McCandless, Adam B. Phillips, Yanfa Yan, Michael J. Heben, Colin Wolden, Gang Xiong, Wyatt K. Metzger, Dan Mao, Dmitry Krasikov, Igor Sankin, Sachit Grover, Amit Munshi, Walajabad Sampath, James R. Sites, Alexandra Bothwell, David Albin, Matthew O. Reese, Alessandro Romeo, Marco Nardone, Robert Klie, J. Michael Walls, Thomas Fiducia, Ali Abbas, Sarah M. Hayes
Publikováno v:
Solar Energy Materials and Solar Cells. 255:112289
Autor:
Joel B. Harley, Michael A. Scarpulla, Ayobami S. Edun, Cody LaFlamme, Cynthia Furse, Samuel Kingston, Evan Benoit
Publikováno v:
IEEE Journal of Photovoltaics. 11:1097-1104
In this article, we explore the possibility of using spread spectrum time domain reflectometry (SSTDR) for detecting disconnections in a large-scale photovoltaic (PV) array. We discuss the importance, role, and trade-offs of SSTDR resolution, frequen
Publikováno v:
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).