Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Michael A. McLain"'
Autor:
A. Privat, John Brunhaver, Edward S. Bielejec, Madeline Esposito, Jeramy R. Dickerson, David S. Ashby, Diana Garland, A. Alec Talin, Jack E. Manuel, M. P. King, Gyorgy Vizkelethy, T. Patrick Xiao, Matthew J. Marinella, Michael Lee McLain, Hugh J. Barnaby
Publikováno v:
IEEE Transactions on Nuclear Science. 68:724-732
Bulk 14-nm FinFET technology was irradiated in a heavy-ion environment (42-MeV Si ions) to study the possibility of displacement damage (DD) in scaled technology devices, resulting in drive current degradation with increased cumulative fluence. These
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24f12164649223bd633050121e1028b4
https://doi.org/10.1109/tns.2021.3072886
https://doi.org/10.1109/tns.2021.3072886
Autor:
Dolores A. Black, Matthew J. Marinella, Jeffrey D. Black, Micahel Skoufis, Luis Bustamante, Heather Quinn, Hugh J. Barnaby, Matthew Breeding, Sapan Agarwal, Ben Feinberg, Michael Lee McLain, Lawrence T. Clark, John Brunhaver, Arun Rodrigues, Matthew Cannon
Publikováno v:
IEEE Transactions on Nuclear Science. 68:980-990
Integration-technology feature shrink increases computing-system susceptibility to single-event effects (SEE). While modeling SEE faults will be critical, an integrated processor’s scope makes physically correct modeling computationally intractable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c7149a3a602311ef3c92ec8adf98bb1
https://doi.org/10.1109/tns.2021.3071653
https://doi.org/10.1109/tns.2021.3071653
Autor:
A. Privat, Lawrence T. Clark, John Brunhaver, Madeline Esposito, A. Duvnjak, Hugh J. Barnaby, Matthew J. Marinella, Jack E. Manuel, Keith E. Holbert, R. Jokai, M. Spear, Michael Lee McLain, M. P. King
Publikováno v:
IEEE Transactions on Nuclear Science. 68:671-676
Total ionizing dose response of 14-nm bulk-Si FinFETs has been studied with a specially designed test chip. The radiation testing shows evidence of interface trap build-up on 14-nm Bulk FinFET technologies. These defects created in the isolation laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7fac0376effd7a8b6dceeb5fb38b665
https://doi.org/10.1109/tns.2021.3065267
https://doi.org/10.1109/tns.2021.3065267
Autor:
Heather Quinn, Matthew J. Marinella, John Brunhaver, Luis Bustamante, Michael Lee McLain, Barnaby Hugh, Sapan Agarwal, Arun Rodrigues, Benjamin Feinberg, Jeffrey D. Black, Matthew Cannon, Dolores A. Black, Clark Lawrence
Publikováno v:
Proposed for presentation at the Nuclear & Space Radiation Effects Conference held November 29 - December 30, 2020..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c87e8361a2ef6f38d1f692367269716
https://doi.org/10.2172/1831591
https://doi.org/10.2172/1831591
Autor:
A. Privat, Jack E. Manuel, Michael Lee McLain, John Brunhaver, Matthew J. Marinella, M. Spear, R. Jokai, Keith E. Holbert, Lawrence T. Clark, A. Duvnjak, Michael King, Hugh J. Barnaby, Madeline Esposito
Publikováno v:
Proposed for presentation at the Nuclear & Space Radiation Effects Conference (NSREC) 2020 held December 1-8, 2020..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa95b0bc0b32c6295335747e6af093a
https://doi.org/10.2172/1831025
https://doi.org/10.2172/1831025
Autor:
Christopher H. Bennett, Andrew M. Tonigan, David Russell Hughart, Matthew Marinella, Robert A. Weller, Robert A. Reed, Ronald D. Schrimpf, Joseph G. Salas, Madeline Esposito, Dolores A. Black, Michael Lee McLain, Dennis R. Ball, Jeffrey D. Black, M. L. Breeding
Publikováno v:
Proposed for presentation at the Radiation and its Effects on Components and Systems (RADECS) 2020 held October 19 - November 20, 2020 in Virtual, Virtual, Virtual..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe83d646c854aeeaedd5ba44167752ce
https://doi.org/10.2172/1824738
https://doi.org/10.2172/1824738
Autor:
J. L. Taggart, Robin B. Jacobs-Gedrim, Hugh J. Barnaby, Edward S. Bielejec, Michael Lee McLain, Will J. Hardy, Keith E. Holbert, Matthew J. Marinella, Michael N. Kozicki
Publikováno v:
IEEE Transactions on Nuclear Science. 66:69-76
With the growing interest to explore Jupiter’s moons, technologies with +10 Mrad(Si) tolerance are now needed, to survive the Jovian environment. Conductive-bridging random access memory (CBRAM) is a nonvolatile memory that has shown a high toleran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d06dde28ba8cc3ff453bd114082772b8
https://doi.org/10.1109/tns.2018.2882529
https://doi.org/10.1109/tns.2018.2882529
Publikováno v:
Volume: 5, Issue: 2 130-141
Research Journal of Business and Management
Research Journal of Business and Management
Purpose- Most research on the benefits of the AACSB accreditation has been focused on financially well-off and research-based institutions. Consequently, there is limited literature on the AACSB accreditation with regard to HBCUs. Over the years, gen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14fcbf7b97c37ce88445ea09e7c2d89c
https://doi.org/10.17261/pressacademia.2018.832
https://doi.org/10.17261/pressacademia.2018.832
Autor:
Fred Hartman, Timothy J. Sheridan, Michael Lee McLain, Paul E. Dodd, Thomas A. Weingartner, J. Kyle McDonald, Marty R. Shaneyfelt, Charles E. Hembree, Dolores A. Black
Publikováno v:
IEEE Transactions on Nuclear Science. 65:184-191
The effect of a linear accelerator’s (LINAC’s) microstructure (i.e., train of narrow pulses) on devices and the associated transient photocurrent models are investigated. The data indicate that the photocurrent response of Si-based RF bipolar jun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4275e210a17069f3c04ded2c1843847
https://doi.org/10.1109/tns.2017.2764799
https://doi.org/10.1109/tns.2017.2764799
Autor:
A. Alec Talin, Matthew J. Marinella, Gyorgy Vizkelethy, David S. Ashby, Madeline Esposito, Diana Garland, Juan Pablo Llinas, Michael Lee McLain
Publikováno v:
Applied Physics Letters. 118:202104
The rapidly increasing use of electronics in high-radiation environments and the continued evolution in transistor architectures and materials demand improved methods to characterize the potential damaging effects of radiation on device performance.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bae8052477da39585f428e652c361c02
https://doi.org/10.1063/5.0053892
https://doi.org/10.1063/5.0053892