Výsledky vyhledávání - "Michael A. Mastro"

Akademický článek

Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

Autor: James C. Gallagher, Michael A. Mastro, Alan G. Jacobs, Robert. J. Kaplar, Karl D. Hobart, Travis J. Anderson

Publikováno v: Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)

Abstract Semiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In particular, GaN has properties that are advantageous for high voltage and high fr

Externí odkaz: https://doaj.org/article/b91217baedd446a78ec363aca62a9849

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Akademický článek

Using machine learning with optical profilometry for GaN wafer screening

Autor: James C. Gallagher, Michael A. Mastro, Mona A. Ebrish, Alan G. Jacobs, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Travis J. Anderson

Publikováno v: Scientific Reports, Vol 13, Iss 1, Pp 1-11 (2023)

Abstract To improve the manufacturing process of GaN wafers, inexpensive wafer screening techniques are required to both provide feedback to the manufacturing process and prevent fabrication on low quality or defective wafers, thus reducing costs res

Externí odkaz: https://doaj.org/article/1ac3926697a74e94a44d8726bab50e74

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Process Optimization for Selective Area Doping of GaN by Ion Implantation

Autor: Michael A. Mastro, Yekan Wang, James C. Gallagher, Michael E. Liao, Mona A. Ebrish, Boris N. Feigelson, Karl D. Hobart, Mark S. Goorsky, Jennifer K. Hite, Alan G. Jacobs, Travis J. Anderson

Publikováno v: Journal of Electronic Materials. 50:4642-4649

In light of the importance of selective area doping in GaN to enable planar process technology, and to avoid the complications from the etch/regrowth process, ion implantation is the recognizable alternative. Annealing to activate dopant species and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f851a284c0b1bf596693b5f7ae2f912b
https://doi.org/10.1007/s11664-021-08984-8

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Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance

Autor: G. M. Foster, Andrew D. Koehler, James C. Gallagher, Jennifer K. Hite, Mona A. Ebrish, Brendan P. Gunning, Travis J. Anderson, Karl D. Hobart, Michael A. Mastro, Robert Kaplar, Francis J. Kub

Publikováno v: Journal of Electronic Materials. 50:3013-3021

Present GaN technology consists primarily of heteroepitaxial, lateral high electron mobility transistors; however, high-power devices would be much more efficiently manufactured with a vertical geometry due to better blocking voltage scaling. This te

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::285511fb8c7b55cfc8ef32c2b55111b1
https://doi.org/10.1007/s11664-021-08840-9

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(Invited) GaN Homoepitaxial Growth and Substrate-Dependent Effects for Vertical Power Devices

Autor: Jaime A. Freitas, Travis J. Anderson, Michael A. Mastro, James C. Gallagher, Jennifer K. Hite, Mona A. Ebrish

Publikováno v: ECS Transactions. 98:63-67

Vertical GaN power switch technology is expected to be utilized in next-generation medium to high voltage power converters due to the low ON-resistance and high breakdown voltage enabled by the improved critical electric field and mobility compared t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1a994d66d5087cd4e4a46d903e5ecdc
https://doi.org/10.1149/09806.0063ecst

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Akademický článek

What are our patients asking Google about acromioclavicular joint injuries?—frequently asked online questions and the quality of online resources

Autor: Kyle K. Obana, MD, Dane R.G. Lind, BA, Michael A. Mastroianni, MD, Alexander J. Rondon, MD, MBA, Frank J. Alexander, ATC, William N. Levine, MD, Christopher S. Ahmad, MD

Publikováno v: JSES Reviews, Reports, and Techniques, Vol 4, Iss 2, Pp 175-181 (2024)

Background: Management of acromioclavicular (AC) joint injuries has been an ongoing source of debate, with over 150 variations of surgery described in the literature. Without a consensus on surgical technique, patients are seeking answers to common q

Externí odkaz: https://doaj.org/article/238d7667d4b04734befb03cec6e327cb

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Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

Autor: Joseph A. Spencer, Marko J. Tadjer, Alan G. Jacobs, Michael A. Mastro, John L. Lyons, Jaime A. Freitas, James C. Gallagher, Quang T. Thieu, Kohei Sasaki, Akito Kuramata, Yuhao Zhang, Travis J. Anderson, Karl D. Hobart

Publikováno v: Applied Physics Letters. 121:192102

Activation of implanted donors into a highly-resistive, nitrogen-doped homoepitaxial β-Ga2O3 has been investigated. Nitrogen acceptors with the concentration of ∼1017 cm−3 were incorporated during epitaxial growth yielding low-doped (net donor c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::887fcdce89e0dcfb0042460b7ba4f39f
https://doi.org/10.1063/5.0120494

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Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation

Autor: James C. Gallagher, Michael A. Mastro, Boris N. Feigelson, Travis J. Anderson, G. M. Foster, Andrew D. Koehler, Alan G. Jacobs, Jennifer K. Hite, Karl D. Hobart, Francis J. Kub

Publikováno v: IEEE Transactions on Semiconductor Manufacturing. 32:478-482

We report selective area n-type doping using ion implantation of Si into semi-insulating, C-doped GaN samples activated using both conventional rapid thermal annealing (RTA) and 30 atm N2 overpressure annealing. Implanted regions were tested for Si a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::89328fce3965e68a12905787235545bb
https://doi.org/10.1109/tsm.2019.2932272

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