Zobrazeno 1 - 2
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pro vyhledávání: '"Michael A. Laughery"'
Autor:
Michael A. Laughery, T. Y. Luo, Husam N. Alshareef, V.H.C. Watt, George A. Brown, Howard R. Huff, M.D. Jackson, A. Karamcheti
Publikováno v:
SPIE Proceedings.
The electrical characteristics of NMOS capacitors fabricated using high quality, ultra-thin SiO2, grown by in-situ steam generation (SSG) in a rapid thermal processing system, and a clustered amorphous SI gate electrode is reported. The results show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::758418a8a6c04902ede4305a57672a31
https://doi.org/10.1117/12.395732
https://doi.org/10.1117/12.395732
Publikováno v:
MRS Proceedings. 567
A major hurdle in the gate dielectric scaling using conventionally grown SiO2 has been excessive tunneling that occurs in ultra-thin (2. High dielectric constant materials have high concentrations of bulk fixed charge, unacceptable levels of Si-Ta2O5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9afce97682b51dacf8b6ef6fffe2167
https://doi.org/10.1557/proc-567-403
https://doi.org/10.1557/proc-567-403