Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Michael A. Gell"'
Publikováno v:
Applied Physics Letters. 57:1523-1525
A distinctive Raman spectrum associated with biatomic sheets of silicon in Si/Ge superlattices has been found in the energy range 370–410 cm−1. This double‐peaked structure was obtained over an order of magnitude of germanium layer thickness, b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccd5979e61e1d2da28891e909953def2
https://doi.org/10.1063/1.104092
https://doi.org/10.1063/1.104092
Publikováno v:
SPIE Proceedings.
STRACT We use Raman scattering to investigate direct gap Si/Ge superlattices for which the Si layers are in the form of biatomic sheets. We find a characteristic signal arising from the presence of the biatomic Si sheets. A range of samples have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c41b8337b72c7046e3daf4bec2580d01
https://doi.org/10.1117/12.24403
https://doi.org/10.1117/12.24403
Autor:
Michael A. Gell, I. D. Ward, C. J. Gibbings, Michael H. Herman, Kimberley Elcess, C. G. Tuppen
Publikováno v:
SPIE Proceedings.
SUMMARY Results of EBER analyses of SiGe alloy and Si/Ge shortperiod superlattices have been presented and comparisons madewith theoretical predictions based on empirical pseudopotentialcalculations. The EBER and theoretical results are generally ing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38a496b70cd7cb840b21ab932778b4f2
https://doi.org/10.1117/12.20861
https://doi.org/10.1117/12.20861