Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Michael A. Carcasi"'
Autor:
Cong Que Dinh, Seiji Nagahara, Yuhei Kuwahara, Arnaud Dauendorffer, Soichiro Okada, Seiji Fujimoto, Shinichiro Kawakami, Satoru Shimura, Makoto Muramatsu, Kayoko Cho, Xiang Liu, Kathleen Nafus, Michael A. Carcasi, Ankur Agarwal, Mark H. Somervell, Lior Huli, Kanzo Kato, Michael Kocsis, Peter De Schepper, Stephen T. Meyers, Lauren McQuade, Kazuki Kasahara, Jara Garcia Santaclara, Rik Hoefnagels, Chris Anderson, Patrick Naulleau
Publikováno v:
Advances in Patterning Materials and Processes XL.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26d02b85b13ca6ca4e771ca40caaaa86
https://doi.org/10.1117/12.2655928
https://doi.org/10.1117/12.2655928
Autor:
Yuanyi Zhang, Mark Somervell, Sean P. Berglund, Colton D'Ambra, Muramatsu Makoto, Rachel A. Segalman, Christopher M. Bates, Craig J. Hawker, Michael A. Carcasi, Lior Huli, Ryan L. Burns
Publikováno v:
Advances in Patterning Materials and Processes XXXVIII.
Bottom-up patterning approaches are gaining traction as the trade-offs between resolution, throughput, and cost continually run into limitations for advanced semiconductor manufacturing technologies. With these constraints in mind, we have previously
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1984cfce30751bf70c0b0958d7cbf30f
https://doi.org/10.1117/12.2583086
https://doi.org/10.1117/12.2583086
Autor:
Hideo Nakashima, Yuichi Yoshida, John S. Petersen, Cong Que Dinh, Balint Meliorisz, Geert Vandenberghe, Philippe Foubert, Kosuke Yoshihara, Kathleen Nafus, Hans-Jürgen Stock, Masaru Tomono, Yuya Kamei, Seiji Nagahara, Michael A. Carcasi, Ryo Shimada, Yoshihiro Kondo, Danilo De Simone, Yukie Minekawa, Peter De Bisschop, Gosuke Shiraishi, Hiroyuki Ide, Serge Biesemans, Kazuhiro Takeshita
Publikováno v:
Advances in Patterning Materials and Processes XXXVI.
Resist Formulation Optimizer (RFO) is created to optimize resist formulation under EUV stochastic effects. Photosensitized Chemically Amplified ResistTM (PSCARTM) 2.0 reaction steps are included in the resist reaction model in RFO in addition to stan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26776e5b3630c27003585fd3828bf3be
https://doi.org/10.1117/12.2515187
https://doi.org/10.1117/12.2515187
Autor:
Hans-Jürgen Stock, Yuya Kamei, Serge Biesemans, Yoshihiro Kondo, Hiroyuki Ide, Ryo Shimada, Yukie Minekawa, Philippe Foubert, Kazuhiro Takeshita, Kosuke Yoshihara, Kathleen Nafus, Geert Vandenberghe, Michael A. Carcasi, Yuichi Yoshida, Peter De Bisschop, Masaru Tomono, Gousuke Shiraishi, Seiji Nagahara, John S. Petersen, Balint Meliorisz, Danilo De Simone, Teruhiko Moriya, Cong Que Dinh
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
Photosensitized Chemically Amplified ResistTM (PSCARTM) has been demonstrated as a promising solution for a high sensitivity resist in EUV lithography mass production. This paper describes the successful calibration of a PSCAR resist model for deploy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab3e0be5e2bcdf438557b4eafbf7d425
https://doi.org/10.1117/12.2515183
https://doi.org/10.1117/12.2515183
Autor:
Akihiro Oshima, Seiichi Tagawa, Hiroyuki Ide, Serge Biesemans, Kosuke Yoshihara, Yoshitaka Konishi, Danilo De Simone, Masafumi Hori, Teruhiko Moriya, Hayakawa Makoto, Hans-Jürgen Stock, Yuya Kamei, Kathleen Nafus, Ryo Aizawa, Ken Maruyama, Takahiro Shiozawa, Yoshihiro Kondo, Motoyuki Shima, Kazuhiro Takeshita, Michael A. Carcasi, Masashi Enomoto, Toru Kimura, Yukie Minekawa, Tomoki Nagai, Gosuke Shiraishi, Hideo Nakashima, Masayuki Miyake, Hisashi Nakagawa, Geert Vandenberghe, Keisuke Yoshida, Masaru Tomono, John S. Petersen, Balint Meliorisz, Takehiko Naruoka, Ryo Shimada, Seiji Nagahara, Satoshi Dei, Foubert Philippe
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
Photosensitized Chemically Amplified ResistTM (PSCARTM) **2.0’s advantages and expectations are reviewed in this paper. Alpha PSCAR in-line UV exposure system (“Litho Enhancer”) was newly installed at imec in a Tokyo Electron Ltd. (TELTM)’s C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::824dfca6e19a82aae0a388d175fc1216
https://doi.org/10.1117/12.2297498
https://doi.org/10.1117/12.2297498
Autor:
Hideo Nakashima, Geert Vandenberghe, Masafumi Hori, Gosuke Shiraishi, Michael A. Carcasi, Masayuki Miyake, Seiji Nagahara, Hiroyuki Ide, Yuya Kamei, Satoshi Dei, Hisashi Nakagawa, Yukie Minekawa, Kosuke Yoshihara, Kathleen Nafus, Yoshihiro Kondo, Tomoki Nagai, Masaru Tomono, Motoyuki Shima, Philippe Foubert, Kazuhiro Takeshita, Ryo Shimada, John S. Petersen, Serge Biesemans, Takehiko Naruoka, Ken Maruyama, Danilo De Simone, Teruhiko Moriya, Akihiro Oshima, Seiichi Tagawa
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
In order to lower the cost of ownership of EUV lithography, high sensitivity EUV resists , enabling higher throughput of EUV scanners are being explored. The concept that utilizes a Photosensitized Chemically Amplified ResistTM (PSCARTM) is a promisi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ab6015c9a8ddc7415432bf2b276d2b0
https://doi.org/10.1117/12.2297370
https://doi.org/10.1117/12.2297370
Autor:
Seiji Nagahara, Akihiro Oshima, Seiichi Tagawa, Kosuke Yoshihara, Michael A. Carcasi, Yukie Minekawa, Takehiko Naruoka, Hisashi Nakagawa, Tomohiro Iseki, Gosuke Shiraishi, Tomoki Nagai
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) continues to be one of the most important candidates for future technology nodes. For the insertion of EUV lithography into device mass production, higher sensitivity of EUV resists is helpful for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83029e1558915e043e8c6fec62e36e9a
https://doi.org/10.1117/12.2258166
https://doi.org/10.1117/12.2258166
Autor:
Geert Vandenberghe, Tomohiro Iseki, Tomoki Nagai, Hisashi Nakagawa, Akihiro Oshima, Michael A. Carcasi, Yoshihiro Kondo, Seiichi Tagawa, Philippe Foubert, Danilo De Simone, Bernd Küchler, Yukie Minekawa, Serge Biesemans, Hans-Jürgen Stock, Takehiko Naruoka, Hideo Nakashima, Yasin Ekinci, Yuya Kamei, Elizabeth Buitrago, Seiji Nagahara, Masafumi Hori, Ryo Shimada, Takahiro Shiozawa, Gosuke Shiraishi, Masaru Tomono, Michaela Vockenhuber, Satoshi Dei, Kosuke Yoshihara, Kathleen Nafus
Publikováno v:
SPIE Proceedings.
A new type of Photosensitized Chemically Amplified Resist (PSCAR) **: “PSCAR 2.0,” is introduced in this paper. PSCAR 2.0 is composed of a protected polymer, a “photo acid generator which can be photosensitized” (PS-PAG), a “photo decomposa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa891c97aae2f8f80b1932ad46b2948
https://doi.org/10.1117/12.2258217
https://doi.org/10.1117/12.2258217
Autor:
Kathleen Nafus, Serge Biesemans, Jeffrey S. Smith, Craig Higgins, Anton J. deVilliers, Erik Verduijn, Michael A. Carcasi, Lior Huli, Dave Hetzer, Jerome Wandell, Vinayak Rastogi
Publikováno v:
SPIE Proceedings.
EUV is an ongoing industry challenge to adopt due to its current throughput limitations. The approach to improve throughput has primarily been through a significant focus on source power which has been a continuing challenge for the industry. The sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18954db9a1613441a438776b65e1db58
https://doi.org/10.1117/12.2048862
https://doi.org/10.1117/12.2048862
Autor:
Shinichiro Kawakami, Yuichiro Miyata, Derek W. Bassett, Michael A. Carcasi, Wallace P. Printz
Publikováno v:
SPIE Proceedings.
Line pattern collapse (LPC) becomes a critical concern as integrated circuit fabrication continues to advance towards the 22 nm node and below. Tokyo Electron Limited (TEL) has been investigating LPC mitigation methods for many years [1] . These miti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::737a5e265fbeafa22ac2736a6560ca85
https://doi.org/10.1117/12.916310
https://doi.org/10.1117/12.916310