Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Michał A. Borysiewicz"'
Autor:
Kamila Ćwik, Jakub Zawadzki, Rafał Zybała, Monika Ożga, Bartłomiej Witkowski, Piotr Wojnar, Małgorzata Wolska-Pietkiewicz, Maria Jędrzejewska, Janusz Lewiński, Michał A. Borysiewicz
Publikováno v:
Compounds, Vol 4, Iss 3, Pp 534-547 (2024)
Zinc oxide (ZnO) is one of the most versatile semiconductor materials with many potential applications. Understanding the interactions between the surface chemistry of ZnO along with its physico-chemical properties are essential for the development o
Externí odkaz:
https://doaj.org/article/93f34c47148240db946c759e26d1a9a2
Autor:
Michał A. Borysiewicz
Publikováno v:
Crystals, Vol 9, Iss 10, p 505 (2019)
Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many properties that make it widely studied in the material science, physics, chemistry, biochemistry, and solid-state electronics communities. Its transparency, possibility
Externí odkaz:
https://doaj.org/article/d69c467776a043a88190102400b407bb
Publikováno v:
Faraday Discussions. 231:298-304
We report a systematic study on the variation of the physical properties of Ni3(HITP)2 (HITP = 2,3,6,7,10,11-hexaiminotriphenylene) in the context of their influence on the capacitive behavior of this material in supercapacitor electrodes prepared us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11a2960a4c76627cf72c420a60b76d28
https://doi.org/10.1039/d1fd00028d
https://doi.org/10.1039/d1fd00028d
Autor:
Andrzej Taube, Michał A. Borysiewicz, Oskar Sadowski, Aleksandra Wójcicka, Jarosław Tarenko, Krzysztof Piskorski, Marek Wzorek
Publikováno v:
Materials Science in Semiconductor Processing. 154:107218
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39e0cd630a04b3a75a9db3c661e030e2
https://doi.org/10.1016/j.mssp.2022.107218
https://doi.org/10.1016/j.mssp.2022.107218
Publikováno v:
Nanotechnology.
We fabricate porous nanostructured 1μm thick ZnO-metal/metal oxide hybrid material thin films using a unique approach utilizing physical vapor deposition with postdeposition annealing. We study Pt, Pd, Ru, Ir and Sn as the metals and find they all f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c59bcf565920afe4511bc73945f54741
https://doi.org/10.1088/1361-6528/ac2c43
https://doi.org/10.1088/1361-6528/ac2c43
Autor:
Aleksandra Wójcicka, Zsolt Fogarassy, Adél Rácz, Tatyana Kravchuk, Grzegorz Sobczak, Michał A. Borysiewicz
Publikováno v:
Vacuum. 203:111299
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1d5cba59a823038a0aee13f3a58bc29
https://doi.org/10.1016/j.vacuum.2022.111299
https://doi.org/10.1016/j.vacuum.2022.111299
Publikováno v:
Faraday discussions. 231
We report a systematic study on the variation of the physical properties of Ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::64e9e4c1f1001c3b4286711f67934f2c
https://pubmed.ncbi.nlm.nih.gov/34259286
https://pubmed.ncbi.nlm.nih.gov/34259286
Autor:
Michał A. Borysiewicz, Anna Kulis-Kapuscinska, Monika Kwoka, Gianaurelio Cuniberti, Massimo Sgarzi
In this work, the properties of zinc oxide (ZnO) low-dimensional conductive oxide nanostructures in the aspect of their potential applications in microelectronics, in toxic gas sensing, as well as in water remediation, have been determined. ZnO nanos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5e58c8a195919024e7e32aa81ef337e
http://hdl.handle.net/10278/3746666
http://hdl.handle.net/10278/3746666
Publikováno v:
Thin Solid Films. 649:61-68
In the present work we analyze the Zn1−xMgxO:Al/Ni/p-GaN system as a transparent electrode for GaN-based UV-LEDs. We first study the properties of the Zn1−xMgxO:Al films obtained by DC magnetron sputtering under various conditions and find that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::704508974f91072c4c5f8c710022b84e
https://doi.org/10.1016/j.tsf.2018.01.028
https://doi.org/10.1016/j.tsf.2018.01.028
Autor:
Krystyna Marta Stiller, Andrzej Taube, Jakub Kaczmarski, Marcin Mysliwiec, Krzysztof Piskorski, Eliana Kamińska, Michał A. Borysiewicz
Publikováno v:
IEEE Transactions on Electron Devices. 65:129-135
With the development of novel device applications, e.g., in the field of Internet of Things or point-of-care personalized diagnostic systems, came an increased demand for MESFETs for fast and low-power consumption integrated circuits and active-matri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::467cf96ed4e1b3db51fc2a7ed515a013
https://doi.org/10.1109/ted.2017.2658939
https://doi.org/10.1109/ted.2017.2658939