Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Michał Ćwil"'
Autor:
Robert Mroczyński, Grzegorz Głuszko, Romuald B. Beck, Andrzej Jakubowski, Michał Ćwil, Piotr Konarski, Patrick Hoffmann, Dieter Schmeißer
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic
Externí odkaz:
https://doaj.org/article/003c8061cc35468d90e4d4ebe16d36db
Autor:
Robert Mroczyński, Tomasz Bieniek, Romuald B. Beck, Michał Ćwil, Piotr Konarski, Patrick Hoffmann, Dieter Schmeißer
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
In this paper differences in chemical composition of ultra-thin silicon oxynitride layers fabricated in planar rf plasma reactor are studied. The ultra-thin dielectric layers were obtained in the same reactor by two different methods: ultrashallow ni
Externí odkaz:
https://doaj.org/article/04cd6989cd194b1286d03ae5337d02fd
The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high- temperatur
Externí odkaz:
https://doaj.org/article/9a7256964546406fbcbdc77b7af7f072
Autor:
Tomasz Bieniek, Romuald B. Beck, Andrzej Jakubowski, Grzegorz Głuszko, Piotr Konarski, Michał Ćwil
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by
Externí odkaz:
https://doaj.org/article/2848ffbfd9ec43f4ae7e5115d8f77103
Autor:
Tomasz Bieniek, Romuald B. Beck, Andrzej Jakubowski, Piotr Konarski, Michał Ćwil, Patrick Hoffmann
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
Experiments presented in this work are a summary of the study that examines the possibility of fabrication of oxynitride layers for Si structures by nitrogen implantation from rf plasma only or nitrogen implantation from rf plasma followed immediatel
Externí odkaz:
https://doaj.org/article/0aff8a3c5ad8405f9ed88ee059619063