Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Micah S. Haseman"'
Cathodoluminescence and x-ray photoelectron spectroscopy of ScN: Dopant, defects, and band structure
Autor:
Micah S. Haseman, Brenton A. Noesges, Seth Shields, John S. Cetnar, Amber N. Reed, Hayder A. Al-Atabi, James H. Edgar, Leonard J. Brillson
Publikováno v:
APL Materials, Vol 8, Iss 8, Pp 081103-081103-7 (2020)
We have studied the optical band and defect transitions of ScN, a group IIIB transition metal nitride semiconductor with electronic and optoelectronic applications. Recent works have focused on the degenerate nature of ScN by substitutional impuritie
Externí odkaz:
https://doaj.org/article/8daa355054074a39bddb5e3e30035d4e
Autor:
Micah S. Haseman, Daram N. Ramdin, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Leonard J. Brillson
Publikováno v:
Journal of Applied Physics. 133:035701
While the properties of β-Ga2O3 continue to be extensively studied for high-power applications, the effects of strong electric fields on the Ga2O3 microstructure and, in particular, the impact of electrically active native point defects have been re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::130e6c123699e3a70eef66e72a1b637b
https://doi.org/10.1063/5.0124543
https://doi.org/10.1063/5.0124543
Autor:
Brenton A. Noesges, Leonard J. Brillson, Kathleen Kash, Jinwoo Hwang, Menglin Zhu, Micah S. Haseman, Daram Ramdin, Walter R. L. Lambrecht, Rezaul Karim, Ella Feinberg, Benthara Hewage Dinushi Jayatunga, Hongping Zhao
Publikováno v:
Journal of Applied Physics. 127:135703
III-nitrides have revolutionized lighting technology and power electronics. Expanding the nitride semiconductor family to include heterovalent ternary nitrides opens up new and exciting opportunities for device design that may help overcome some of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59d2845ab60c17c05e67c7b63b8aa6c2
https://doi.org/10.1063/1.5141335
https://doi.org/10.1063/1.5141335