Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Miaoxuan Zeng"'
Autor:
Mingcheng Panmai, Jin Xiang, Shulei Li, Xiaobing He, Yuhao Ren, Miaoxuan Zeng, Juncong She, Juntao Li, Sheng Lan
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Enhancing the efficiency of quantum emitters is essential for exploring new functionalities. Here the authors show Si cuboids that sustain bound states in the continuum enable the injection of dense electron-hole plasma and provide high quantum effic
Externí odkaz:
https://doaj.org/article/218f95c5e1e143b7be0b06506ae60bd4
Autor:
Jinlun Huang, Yifeng Huang, Miaoxuan Zeng, Ningsheng Xu, Yuan Huang, Jun Chen, Juncong She, Shaozhi Deng
Publikováno v:
ACS Applied Nano Materials. 6:351-357
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ce0aed509d1cee8b1df32609cbb8820
https://doi.org/10.1021/acsanm.2c04457
https://doi.org/10.1021/acsanm.2c04457
Autor:
Yifeng Huang, Yang Chen, Zhijun Huang, Miaoxuan Zeng, Zengjie Gu, Wei Yang, Jun Chen, Ningsheng Xu, Juncong She, Shaozhi Deng
Publikováno v:
IEEE Transactions on Electron Devices. 69:3908-3913
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49cd20a87a86baef6a29816ccdb5a38a
https://doi.org/10.1109/ted.2022.3172046
https://doi.org/10.1109/ted.2022.3172046
Publikováno v:
IEEE Electron Device Letters. 43:466-469
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d59f2c5777c3549289714b456d2a4e38
https://doi.org/10.1109/led.2022.3148397
https://doi.org/10.1109/led.2022.3148397
Autor:
Wei Yang, Yaowen Lu, Jun Chen, Jiajie Yu, Miaoxuan Zeng, Juncong She, Shaozhi Deng, Zengjie Gu, Yifeng Huang
Publikováno v:
IEEE Transactions on Electron Devices. 67:4467-4472
Integrated field emission electron sources with low driving voltage are desired for micro/nano vacuum electronics. Herein, we demonstrate the enhanced and stable electron emission from crystalline gold–silver (Au–Ag) alloy nanoparticle capped Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef28e68784ed4f2e5333d8f2409995ab
https://doi.org/10.1109/ted.2020.3019231
https://doi.org/10.1109/ted.2020.3019231
Autor:
Juncong She, Li Gong, Runze Zhan, Miaoxuan Zeng, Yifeng Huang, Jun Chen, Shaozhi Deng, Zhijun Huang, Ningsheng Xu
Publikováno v:
IEEE Transactions on Electron Devices. 66:1545-1551
The improving of tip-to-tip electron emission uniformity in an array is one of the essential issues for the vacuum microelectronic/nanoelectronic applications. Here, we report the achieving of quasi-saturated ultrahigh arsenic concentration ( $\sim 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eaeebd337c36e36880179184265f81a
https://doi.org/10.1109/ted.2019.2893332
https://doi.org/10.1109/ted.2019.2893332
Publikováno v:
2020 33rd International Vacuum Nanoelectronics Conference (IVNC).
The abstract reports the fabrication, the enhanced field emission and the underlying physics of Au-Ag alloy nanoparticle capped silicon nanowires. It was found that the Au-Ag/Si nanojunction with space-charge-limited conduction in series with individ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e67532db10816902e95971139f5e940c
https://doi.org/10.1109/ivnc49440.2020.9203439
https://doi.org/10.1109/ivnc49440.2020.9203439
Autor:
Li Gong, Miaoxuan Zeng, Runze Zhan, Ningsheng Xu, Jun Chen, Shaozhi Deng, Zhijun Huang, Juncong She, Yifeng Huang
Publikováno v:
2018 31st International Vacuum Nanoelectronics Conference (IVNC).
Both numerical simulation and experimental investigations revealed that the arsenic concentration in the nano-apex of Si tip can reach a saturated high level (i.e., $\sim6.7$$\times$ 1021 /cm3) through a controllable oxidation process. We take the th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eabc114af9dd903caee7721a609ce130
https://doi.org/10.1109/ivnc.2018.8520274
https://doi.org/10.1109/ivnc.2018.8520274
Autor:
Runze Zhan, Juncong She, Ximing Li, Shaozhi Deng, Yifeng Huang, Jun Chen, Miaoxuan Zeng, Zhijun Huang, Ningsheng Xu
Publikováno v:
Nanotechnology. 30:365601
Vertically aligned Si nanoconstrictions have potential for applications of electronic, photonic and phononic nanodevices. Herein, we report a featured method by utilizing the non-uniaxial tangential tension stress (σ T ) at the Si surface of a verti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60dcdf1a9d9ca8796c1403d21a56cb69
https://doi.org/10.1088/1361-6528/ab1f5f
https://doi.org/10.1088/1361-6528/ab1f5f
Autor:
Ningsheng Xu, Miaoxuan Zeng, Yifeng Huang, Juncong She, Runze Zhan, Shaozhi Deng, Jun Chen, Shasha Li
Publikováno v:
Journal of Micromechanics and Microengineering. 28:085001
Well-shaped micro/nano-structured suspended graphene is a versatile building block for micro/nano-electromechanical (MEMS/NEMS) devices. Directly 'sculpting' the suspended graphene membrane using an accelerated energetic electron/ion beam to form mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64850561d599eb9e04f60a777347c733
https://doi.org/10.1088/1361-6439/aabd44
https://doi.org/10.1088/1361-6439/aabd44