Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Miaomiao Chao"'
Autor:
Guangxing Pan, Mingjie Yi, Zhenye Zhu, Ke Qin, Yuanbo Tan, Jiaheng Zhang, Shunyou Hu, Miaomiao Chao, Zhixiong Yang, Hui Li, Huang Qin, Xueting Zhang, Wanbao Wu
Publikováno v:
Ionics. 26:3785-3794
In this study, a series of cobalt-free Sn-doped cathode materials of Li1.15Ni0.27Mn0.58-xSnxO2 are prepared by the solvothermal method for the first time. The structural characterization of the material reveals that all the samples consist of hexagon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb465baecefc810400131e659d40434
https://doi.org/10.1007/s11581-020-03543-3
https://doi.org/10.1007/s11581-020-03543-3
Publikováno v:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In order to study the (√3×√3) R30°(abbr.√3) and (3×3) reconstruction structures on 6H-SiC (0001) -Si terminal after S atoms adsorption, the first-principles calculations were performed to investigate the properties of surface adsorption ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfcb36524b374bcedf1225a9b30b20b7
https://doi.org/10.1109/icsict.2016.7998641
https://doi.org/10.1109/icsict.2016.7998641
Publikováno v:
2015 IEEE 2nd International Future Energy Electronics Conference (IFEEC).
Passivation is an effective way to reduce density of states (DOS) on the surface. In order to verify the differences and stabilities of H2S passivation on Si- and C-face of 6H-SiC, the adsorption of H2S on surface is studied by the first principles m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d33399a44de27ed9119878b31da5d55
https://doi.org/10.1109/ifeec.2015.7361435
https://doi.org/10.1109/ifeec.2015.7361435
Publikováno v:
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
Based on first-principles calculation, the surface stability of S-passivated 6H-SiC in different terminals are researched through investigating surface energy, charge distribution and density of states with the change of sulfur coverage from1/4 monol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8616d060b33213e0ca07fbdcb8569b8
https://doi.org/10.1109/icsict.2014.7021329
https://doi.org/10.1109/icsict.2014.7021329
Publikováno v:
2015 IEEE 2nd International Future Energy Electronics Conference (IFEEC); 2015, p1-4, 4p
Publikováno v:
2014 12th IEEE International Conference on Solid-State & Integrated Circuit Technology (ICSICT); 2014, p1-3, 3p