Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Miao-Rong Zhang"'
Autor:
Hui Huang, Wei-Xing Song, Ge-Bo Pan, Zu-Gang Wang, Miao-Rong Zhang, Chao Wang, Hong-Dan Peng, Rui Xi
Publikováno v:
Chemical Physics Letters. 710:54-58
Nonaqueous organic electrolyte was utilized to etch GaN via photo-electrochemical etching technique. From the point of electrochemical window, the organic electrolyte has wider electrochemical window than conventional aqueous etchants. SEM images sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a7f14e9fa4dea70614a72aa0acf984
https://doi.org/10.1016/j.cplett.2018.08.064
https://doi.org/10.1016/j.cplett.2018.08.064
Publikováno v:
Materials Letters. 223:194-197
Porous gallium nitride (GaN) luminescent materials were fabricated by photoelectrochemical etching using three different 1-ethyl-3-methylimidazolium ([EMIM])-based ionic liquids as the etchants. The as-etched porous GaN presents honeycomb shape, deep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba9a82168cd6a8135b69472989844796
https://doi.org/10.1016/j.matlet.2018.04.007
https://doi.org/10.1016/j.matlet.2018.04.007
Autor:
Shaohui Zhang, Zu-Gang Wang, Fei Hou, Qing-Mei Jiang, Miao-Rong Zhang, Ge-Bo Pan, Ying Chen, Liqiang Luo
Publikováno v:
Journal of Electroanalytical Chemistry. 809:105-110
Bismuth-modified gallium nitride (Bi/GaN) electrode was fabricated using an in situ plating technique and simultaneously investigated for the detection of Cd2 + by square wave anodic stripping voltammetry (SWASV). Under the optimized conditions, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d14333cbc7e804e464025487fc3e1243
https://doi.org/10.1016/j.jelechem.2017.12.056
https://doi.org/10.1016/j.jelechem.2017.12.056
Publikováno v:
Sensors and Actuators B: Chemical. 253:652-659
Three-dimensional (3D) metal-semiconductor nanostructures as surface-enhanced Raman scattering (SERS) substrates were designed by in situ electrodeposition of gold nanoparticles (AuNPs) or in situ photodeposition of silver nanoparticles (AgNPs) on ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d1e53d85ee969370ce8c6194ec235ee
https://doi.org/10.1016/j.snb.2017.07.002
https://doi.org/10.1016/j.snb.2017.07.002
Publikováno v:
Chemical Physics Letters. 687:317-321
In this study, we report for the preparation of nickel phthalocyanine (NiPc) free-standing films on ionic liquid (IL) surface by a physical vapor deposition method. Different from on the solid substrate, the as-obtained film is α phase and with a 2D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fac5ac4353d9f6d086183e9f0a72cb68
https://doi.org/10.1016/j.cplett.2017.09.038
https://doi.org/10.1016/j.cplett.2017.09.038
Publikováno v:
Applied Surface Science. 422:216-220
Gallium nitride (GaN) nanowires (NWs) were fabricated by metal-assisted photochemical etching (MaPEtch). Gold nanoparticles (AuNPs) as metal catalyst were electrodeposited on the GaN substrate. SEM and HRTEM images show the surface of GaN NWs is smoo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f09237399e37172bd0feced4bc3d2c76
https://doi.org/10.1016/j.apsusc.2017.06.014
https://doi.org/10.1016/j.apsusc.2017.06.014
Publikováno v:
Journal of Materials Science. 53:2956-2964
The structural relaxation times of metallic glasses (MGs) are generally believed to decrease with increasing flow rate, also known as shear thinning. In this work, an extraordinary loading rate-independent creep relaxation time, in contrast to the de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae40ad8f569c5d31c54e848b8ecef436
https://doi.org/10.1007/s10853-017-1725-y
https://doi.org/10.1007/s10853-017-1725-y
Publikováno v:
Talanta. 171:250-254
Bismuth nanodendrites (BiNDs) were electrodeposited on planar gallium nitride (GaN) electrode via a differential pulse voltammetric technique to fabricate the non-enzymatic hydrogen peroxide (H2O2) sensor. SEM images revealed that the as-obtained BiN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd13961e5cc47f23211e1392d8d6d47e
https://doi.org/10.1016/j.talanta.2017.04.075
https://doi.org/10.1016/j.talanta.2017.04.075
Publikováno v:
Applied Surface Science. 410:332-335
Gallium nitride (GaN) surface was etched by 0.3 M ethylenediamine tetraacetic acid disodium (EDTA-2Na) via photoelectrochemical etching technique. SEM images reveal the etched GaN surface becomes rough and irregular. The pore density is up to 1.9 ×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd1f7d04bfe17a7e9590e9c2163d2e41
https://doi.org/10.1016/j.apsusc.2017.03.063
https://doi.org/10.1016/j.apsusc.2017.03.063
Publikováno v:
Sensors and Actuators B: Chemical. 240:142-147
Here we report the electrodeposition of gold nanoparticles (AuNPs) onto porous GaN electrode obtained by photoelectrochemical etching planar GaN to fabricate a non-enzymatic hydrogen peroxide (H2O2) sensor. SEM images revealed porous GaN has uniforml
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c116fc380de8573e9af09d9654d403a
https://doi.org/10.1016/j.snb.2016.08.124
https://doi.org/10.1016/j.snb.2016.08.124