Zobrazeno 1 - 10
of 837
pro vyhledávání: '"Miao Xiangshui"'
Autor:
Zhou, Zijian, Huang, Jinhai, Xue, Kan-Hao, Yu, Heng, Yang, Shengxin, Liu, Shujuan, Wang, Yiqun, Miao, Xiangshui
As the dielectric film thickness shrinks to ~10 nm, some traditional wurtzite piezoelectric materials demonstrate ferroelectricity through element doping. Among them, Sc doped AlN and Mg doped ZnO are the most famous examples. While it is widely ackn
Externí odkaz:
http://arxiv.org/abs/2410.02471
Autor:
Tan Zhifang, Pang Jincong, Niu Guangda, Yuan Jun-Hui, Xue Kan-Hao, Miao Xiangshui, Tao Weijian, Zhu Haiming, Li Zhigang, Zhao Hongtao, Du Xinyuan, Tang Jiang
Publikováno v:
Nanophotonics, Vol 10, Iss 8, Pp 2249-2256 (2021)
Metal halide perovskites have recently been reported as excellent scintillators for X-ray detection. However, perovskite based scintillators are susceptible to moisture and oxygen atmosphere, such as the water solubility of CsPbBr3, and oxidation vul
Externí odkaz:
https://doaj.org/article/2fffd0c275824b449b340b98d8953374
Structure evolution path of ferroelectric hafnium zirconium oxide nanocrystals under in-situ biasing
Autor:
Zheng, Yunzhe, Yu, Heng, Xin, Tianjiao, Xue, Kan-Hao, Xu, Yilin, Gao, Zhaomeng, Liu, Cheng, Zhao, Qiwendong, Zheng, Yonghui, Miao, Xiangshui, Cheng, Yan
Fluorite-type $\mathrm{HfO_2}$-based ferroelectric (FE) oxides have rekindled interest in FE memories due to their compatibility with silicon processing and potential for high-density integration. The polarization characteristics of FE devices are go
Externí odkaz:
http://arxiv.org/abs/2409.11217
Publikováno v:
Applied Physics Letters 125, 102903 (2024)
While ferroelectric hafnia ($\mathrm{HfO_2}$) has become a technically important material for microelectronics, the physical origin of its ferroelectricity remains poorly understood. The tetragonal $P4_2/nmc$ phase is commonly assigned as its paraele
Externí odkaz:
http://arxiv.org/abs/2403.08234
Autor:
Yan, Zhao-Yi, Hou, Zhan, Xue, Kan-Hao, Lu, Tian, Zhao, Ruiting, Xue, Junying, Wu, Fan, Shao, Minghao, Yan, Jianlan, Yan, Anzhi, Wang, Zhenze, Shen, Penghui, Zhao, Mingyue, Miao, Xiangshui, Lin, Zhaoyang, Liu, Houfang, Tian, He, Yang, Yi, Ren, Tian-Ling
Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based transistors in term
Externí odkaz:
http://arxiv.org/abs/2303.11107
Autor:
Huang, Jinhai, Mao, Ge-Qi, Xue, Kan-Hao, Yang, Shengxin, Ye, Fan, Sun, Huajun, Miao, Xiangshui
Publikováno v:
Journal of Applied Physics 133, 184101 (2023)
$\mathrm{HfO_2}$-based dielectrics are promising for nanoscale ferroelectric applications, and the most favorable material within the family is Zr-substituted hafnia, i.e., $\mathrm{Hf_{1-x}Zr_xO_2}$ (HZO). The extent of Zr substitution can be great,
Externí odkaz:
http://arxiv.org/abs/2302.03852
Publikováno v:
Journal of Chemical Physics 158, 094103 (2023)
DFT-1/2 is an efficient band gap rectification method for density functional theory (DFT) under local density approximation (LDA) or generalized gradient approximation. It was suggested that non-self-consistent DFT-1/2 should be used for highly ionic
Externí odkaz:
http://arxiv.org/abs/2209.01636
Autor:
Bai, Na, Xue, Kan-Hao, Huang, Jinhai, Yuan, Jun-Hui, Wang, Wenlin, Mao, Ge-Qi, Zou, Lanqing, Yang, Shengxin, Lu, Hong, Sun, Huajun, Miao, Xiangshui
Publikováno v:
Advanced Electronic Materials 9, 2200737 (2023)
The wake-up phenomenon widely exists in hafnia-based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at higher temperatures have been reported to be effective in eliminating wake-up, but high temperature m
Externí odkaz:
http://arxiv.org/abs/2206.14393
Autor:
Gu, Rongchuan, Yuan, Shaojie, Wang, Huan, Xu, Qundao, Tang, Siqi, Xu, Meng, Qiao, Chong, Wang, Cai-Zhuang, Wang, Songyou, Xu, Ming, Miao, Xiangshui
Publikováno v:
In Journal of Alloys and Compounds 15 November 2024 1005
Autor:
Shi, Yijie, Hao, Jiongyue, Dong, Yingchun, Guo, Xuezheng, Liang, Chengyao, Kibet, Evans, He, Yuhui, Ge, Liang, Gao, Chao, Miao, Xiangshui, Meng, Gang, He, Yong
Publikováno v:
In Applied Surface Science 15 October 2024 670