Zobrazeno 1 - 10
of 227
pro vyhledávání: '"Miao Jinshui"'
Autor:
Zheng Dingshan, Wang Hailu, Chen Ruoling, Li Long, Guo Jiaxiang, Gu Yue, Zubair Muhammad M., Yu Xiangxiang, Jiang Long, Zhu Desheng, Xiong Yan, Zhang Han, Yang Wen-Xing, Miao Jinshui
Publikováno v:
Nanophotonics, Vol 10, Iss 18, Pp 4637-4644 (2021)
Tin sulfide semiconductor nanowires (NWs) have been widely investigated for photodetection applications because of their good optical and electrical properties. Herein, we synthesized n-type SnS2 NWs and then fabricated SnS2 NW photodetectors with a
Externí odkaz:
https://doaj.org/article/686ac4da56214a7ca5c8306759f07961
Autor:
Wang, Xinyu 1, †, Wang, Die 1, †, Tian, Yuchen 1, †, Guo, Jing 1, Miao, Jinshui 2, ⁎, Hu, Weida 2, Wang, Hailu 2, Liu, Kang 1, Shao, Lei 3, ⁎, Gou, Saifei 1, Dong, Xiangqi 1, Su, Hesheng 1, Sheng, Chuming 1, Zhu, Yuxuan 1, Zhang, Zhejia 1, Zhang, Jinshu 1, Sun, Qicheng 1, Xu, Zihan 4, Zhou, Peng 1, 5, Chen, Honglei 2, ⁎, Bao, Wenzhong 1, 5, ⁎
Publikováno v:
In Chip December 2024 3(4)
Autor:
Miao, Jinshui, Leblanc, Chloe, Liu, Xiwen, Song, Baokun, Zhang, Huairuo, Krylyuk, Sergiy, Davydov, Albert V., Back, Tyson, Glavin, Nicholas, Jariwala, Deep
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit steep sub-
Externí odkaz:
http://arxiv.org/abs/2111.06396
Autor:
Jo, Kiyoung, Kumar, Pawan, Orr, Joseph, Anantharaman, Surendra B., Miao, Jinshui, Motala, Michael, Bandyopadhyay, Arkamita, Kisslinger, Kim, Muratore, Christopher, Shenoy, Vivek B., Stach, Eric, Glavin, Nicholas, Jariwala, Deep
Publikováno v:
ACS Nano 2021
The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despi
Externí odkaz:
http://arxiv.org/abs/2101.12203
Autor:
Liu, Xiwen, Wang, Dixiong, Zheng, Jeffrey, Musavigharavi, Pariasadat, Miao, Jinshui, Stach, Eric A., Olsson III, Roy H., Jariwala, Deep
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent e
Externí odkaz:
http://arxiv.org/abs/2010.12062
Autor:
Song, Baokun, Hou, Jin, Wang, Haonan, Sidhik, Siraj, Miao, Jinshui, Gu, Honggang, Zhang, Huiqin, Liu, Shiyuan, Fakhraai, Zahra, Even, Jacky, Blancon, Jean-Christophe, Mohite, Aditya D., Jariwala, Deep
Two-dimensional (2D) hybrid organic inorganic perovskite (HOIP) semiconductors have attracted widespread attention as a platform of next generation optoelectronic devices benefiting from their naturally occurring and tunable multiple quantum-well lik
Externí odkaz:
http://arxiv.org/abs/2009.14812
Autor:
Song, Baokun, Liu, Fang, Wang, Haonan, Miao, Jinshui, Chen, Yueli, Kumar, Pawan, Zhang, Huiqin, Liu, Xiwen, Gu, Honggang, Stach, Eric A., Liang, Xuelei, Liu, Shiyuan, Fakhraai, Zahra, Jariwala, Deep
Electrically-tunable optical properties in materials are desirable for many applications ranging from displays to lasing and optical communication. In most two-dimensional thin-films and other quantum confined materials, these constants have been mea
Externí odkaz:
http://arxiv.org/abs/2009.11449
Autor:
Miao, Jinshui, Liu, Xiwen, Jo, Kiyoung, He, Kang, Saxena, Ravindra, Song, Baokun, Zhang, Huiqin, He, Jiale, Han, Myung-Geun, Hu, Weida, Jariwala, Deep
Publikováno v:
Nano Letters 2020
Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have l
Externí odkaz:
http://arxiv.org/abs/2003.09807
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Akademický článek
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