Zobrazeno 1 - 10
of 202
pro vyhledávání: '"Miao Jinshui"'
Autor:
Wang, Xinyu 1, †, Wang, Die 1, †, Tian, Yuchen 1, †, Guo, Jing 1, Miao, Jinshui 2, ⁎, Hu, Weida 2, Wang, Hailu 2, Liu, Kang 1, Shao, Lei 3, ⁎, Gou, Saifei 1, Dong, Xiangqi 1, Su, Hesheng 1, Sheng, Chuming 1, Zhu, Yuxuan 1, Zhang, Zhejia 1, Zhang, Jinshu 1, Sun, Qicheng 1, Xu, Zihan 4, Zhou, Peng 1, 5, Chen, Honglei 2, ⁎, Bao, Wenzhong 1, 5, ⁎
Publikováno v:
In Chip December 2024 3(4)
Autor:
Miao, Jinshui, Leblanc, Chloe, Liu, Xiwen, Song, Baokun, Zhang, Huairuo, Krylyuk, Sergiy, Davydov, Albert V., Back, Tyson, Glavin, Nicholas, Jariwala, Deep
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit steep sub-
Externí odkaz:
http://arxiv.org/abs/2111.06396
Autor:
Jo, Kiyoung, Kumar, Pawan, Orr, Joseph, Anantharaman, Surendra B., Miao, Jinshui, Motala, Michael, Bandyopadhyay, Arkamita, Kisslinger, Kim, Muratore, Christopher, Shenoy, Vivek B., Stach, Eric, Glavin, Nicholas, Jariwala, Deep
Publikováno v:
ACS Nano 2021
The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despi
Externí odkaz:
http://arxiv.org/abs/2101.12203
Autor:
Liu, Xiwen, Wang, Dixiong, Zheng, Jeffrey, Musavigharavi, Pariasadat, Miao, Jinshui, Stach, Eric A., Olsson III, Roy H., Jariwala, Deep
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent e
Externí odkaz:
http://arxiv.org/abs/2010.12062
Autor:
Song, Baokun, Hou, Jin, Wang, Haonan, Sidhik, Siraj, Miao, Jinshui, Gu, Honggang, Zhang, Huiqin, Liu, Shiyuan, Fakhraai, Zahra, Even, Jacky, Blancon, Jean-Christophe, Mohite, Aditya D., Jariwala, Deep
Two-dimensional (2D) hybrid organic inorganic perovskite (HOIP) semiconductors have attracted widespread attention as a platform of next generation optoelectronic devices benefiting from their naturally occurring and tunable multiple quantum-well lik
Externí odkaz:
http://arxiv.org/abs/2009.14812
Autor:
Song, Baokun, Liu, Fang, Wang, Haonan, Miao, Jinshui, Chen, Yueli, Kumar, Pawan, Zhang, Huiqin, Liu, Xiwen, Gu, Honggang, Stach, Eric A., Liang, Xuelei, Liu, Shiyuan, Fakhraai, Zahra, Jariwala, Deep
Electrically-tunable optical properties in materials are desirable for many applications ranging from displays to lasing and optical communication. In most two-dimensional thin-films and other quantum confined materials, these constants have been mea
Externí odkaz:
http://arxiv.org/abs/2009.11449
Autor:
Miao, Jinshui, Liu, Xiwen, Jo, Kiyoung, He, Kang, Saxena, Ravindra, Song, Baokun, Zhang, Huiqin, He, Jiale, Han, Myung-Geun, Hu, Weida, Jariwala, Deep
Publikováno v:
Nano Letters 2020
Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have l
Externí odkaz:
http://arxiv.org/abs/2003.09807
Akademický článek
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Akademický článek
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Autor:
Zhang, Huiqin, Abhiraman, Bhaskar, Zhang, Qing, Miao, Jinshui, Jo, Kiyoung, Roccasecca, Stefano, Knight, Mark W., Davoyan, Artur R., Jariwala, Deep
Van der Waals materials and heterostructures manifesting strongly bound room temperature exciton states exhibit emergent physical phenomena and are of a great promise for optoelectronic applications. Here, we demonstrate that nanostructured multilaye
Externí odkaz:
http://arxiv.org/abs/1912.13442