Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors.

Autor: Fluegel B; National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA., Mialitsin AV; National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA., Beaton DA; National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA., Reno JL; Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, USA., Mascarenhas A; National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA.

Publikováno v: Nature communications [Nat Commun] 2015 May 28; Vol. 6, pp. 7136. Date of Electronic Publication: 2015 May 28.