Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Mi-Suk Bae"'
Autor:
Jin-Suk Wang, Hun-Jin Lee, Seong-Hyung Park, Jang-Gn Yun, Soon-Young Oh, Bin-Feng Huang, Mi-Suk Bae, Hee-Hwan Ji, Hi-Deok Lee
Publikováno v:
Japanese Journal of Applied Physics. 43:91-95
In this paper, the dependency of silicide properties such as sheet resistance and cross-sectional profile of NiSi on the source/drain and gate dopants is described. There was minimal difference in sheet resistance among the dopants used, namely, As,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b247081ff825f87f61809dfc8d49aa41
https://doi.org/10.1143/jjap.43.91
https://doi.org/10.1143/jjap.43.91
Autor:
Hee-Hwan Ji, Hi-Deok Lee, Ki-Seok Yoon, Keun-Koo Kang, Young-Jin Park, Mi-Suk Bae, Myoung-Jun Jang, Jung-Hoon Choi, Geun-Suk Park, Joo-Hyoung Lee, Key-Min Lee, Seong-Hyun Park
Publikováno v:
Japanese Journal of Applied Physics. 41:2445-2449
The penetration depth of cobalt silicide layer in shallow junction is assessed using the current–voltage curve both in reverse and forward bias regions. The reverse leakage current characteristics said that silicide has affected both of the areal a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4db6d6518823d485c0254ba0727be5f5
https://doi.org/10.1143/jjap.41.2445
https://doi.org/10.1143/jjap.41.2445
Autor:
Won-Joon Ho, Yong-Goo Kim, Bin-Feng Huang, Jang-Gn Yun, Dae-Byung Kim, Jeong-Gun Lee, Seong-Hyung Park, Jin-Suk Wang, Sang-Bum Hu, Nak-Gyun Sung, Hee-Hwan Ji, Hi-Deok Lee, Mi-Suk Bae, Soon-Young Oh, Hun-Jin Lee, Hee Seung Lee
Publikováno v:
Electrochemical and Solid-State Letters. 7:G83
Nickel silicide is a most up-to-date self-aligned silicide (salicide) technology for nanoscale complementary metal-oxide-semiconductor field-effect transistors. However, an unintended oxidation of nickel silicide happenedonly on As-doped substrate. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8242c7aa5f9687ada4d4440f1e6e9e3
https://doi.org/10.1149/1.1649831
https://doi.org/10.1149/1.1649831