Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Mi-Hee Ji"'
Autor:
Daryl Key, Edward Letts, Chuan-Wei Tsou, Mi-Hee Ji, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Shyh-Chiang Shen, Russell Dupuis, Tadao Hashimoto
Publikováno v:
Materials, Vol 12, Iss 12, p 1925 (2019)
Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2” GaN substrates through our proprietary Near Equilibrium A
Externí odkaz:
https://doaj.org/article/1576668a9ca04c5d8082f83c74188a0c
Autor:
Hoon Jeong, E. A. Garzda, Mi-Hee Ji, Minkyu Cho, Theeradetch Detchprohm, Shyh-Chiang Shen, A. N. Otte, Russell D. Dupuis
Publikováno v:
IEEE Journal of Quantum Electronics. 59:1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e31ae02fcc6c3448180fd50642cfe903
https://doi.org/10.1109/jqe.2023.3266759
https://doi.org/10.1109/jqe.2023.3266759
Autor:
Russell D. Dupuis, Jiming Bao, Theeradetch Detchprohm, Shahab Shervin, Tain Tong, Kamrul Alam, R. L. Forrest, Mi-Hee Ji, Jae-Hyun Ryou, Sara Pouladi, Jie Chen, Mina Moradnia
Publikováno v:
Journal of Materials Chemistry C. 9:2243-2251
Flexible electronics and mechanically bendable devices based on Group III-N semiconductor materials are emerging; however, there are several challenges in manufacturing, such as cost reduction, device stability and flexibility, and device-performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::184a453bb4b09fe3558c4a53819cb415
https://doi.org/10.1039/d0tc04634e
https://doi.org/10.1039/d0tc04634e
Autor:
Pooran Chandra Joshi, Tolga Aytug, M. Parans Paranthaman, Neil R. Taylor, Mi-Hee Ji, Ivan I. Kravchenko, Lei Cao
Publikováno v:
IEEE Transactions on Power Electronics. 36:41-44
Large-size vertical β -Ga2O3 Schottky barrier diodes (SBDs) with various device areas were demonstrated on a Si-doped n -type drift layer grown by hydride vapor phase epitaxy (HVPE) on bulk Sn-doped (001) n -type β -Ga2O3 substrate. In this letter,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::846f711380da6e7cf44d8364a687cb0b
https://doi.org/10.1109/tpel.2020.3001530
https://doi.org/10.1109/tpel.2020.3001530
Autor:
Jeomoh Kim, Yuanzheng Zhu, Russell D. Dupuis, Mi-Hee Ji, Theeradetch Detchprohm, Shyh-Chiang Shen
Publikováno v:
IEEE Photonics Technology Letters. 30:181-184
Front-illuminated GaN-based separate absorption and multiplication (SAM) ultraviolet (UV) avalanche photodiodes (APDs) with various photon detection areas are demonstrated grown by metalorganic chemical vapor deposition on bulk GaN native substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6ddafa73578eb653017e013b514ce0f
https://doi.org/10.1109/lpt.2017.2779798
https://doi.org/10.1109/lpt.2017.2779798
Autor:
L. S. Pan, Lei Cao, Pooran Chandra Joshi, Tolga Aytug, M. Parans Paranthaman, Mi-Hee Ji, Praneeth Kandlakunta, Neil R. Taylor, Ivan I. Kravchenko
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1013:165664
The Schottky barrier diodes were fabricated from a bulk Sn-doped (001) n-type Ga 2O3 substrate with a Si-doped epitaxial layer grown by hydride vapor phase epitaxy (HVPE), which demonstrate a good response to X-rays. Circular metal contacts with diam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e440b95d0f959f65442b685210f7ad3b
https://doi.org/10.1016/j.nima.2021.165664
https://doi.org/10.1016/j.nima.2021.165664
Autor:
Theeradetch Detchprohm, Russell D. Dupuis, Edward Letts, Mi-Hee Ji, Chuan-Wei Tsou, Shyh-Chiang Shen, Marzieh Bakhtiary-Noodeh, Tadao Hashimoto, Daryl Key
Publikováno v:
Materials, Vol 12, Iss 12, p 1925 (2019)
Materials
Volume 12
Issue 12
Materials
Volume 12
Issue 12
Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2&rdquo
GaN substrates through our proprietary Near Equil
GaN substrates through our proprietary Near Equil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32c267c7e3033402819b093264157dcb
https://www.mdpi.com/1996-1944/12/12/1925
https://www.mdpi.com/1996-1944/12/12/1925
Autor:
Ashok K. Sood, Shyh-Chiang Shen, Marzieh Bakhtiary-Noodeh, Russell D. Dupuis, Sachidananda Babu, Nibir K. Dhar, Theeradetch Detchprohm, Jay Lewis, P. Parminder Ghuman, Hoon Jeong, Mi-Hee Ji
Publikováno v:
Gallium Nitride Materials and Devices XIV.
Front-illuminated GaN p-i-p-i-n separate-absorption and multiplication avalanche photodiode (SAM-APD) epitaxial structures were grown by metalorganic chemical vapor deposition (MOCVD) on n-type bulk GaN substrates and fabricated into 4×4 arrays with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5e9c0bd246b81b71e4e71903522fec6
https://doi.org/10.1117/12.2507880
https://doi.org/10.1117/12.2507880
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 989:164961
Electrical characterization of several 4H-SiC Schottky diodes with Aerosol-Jet printed gold (Au), silver (Ag), and platinum (Pt) contacts was performed using forward and reverse current–voltage (IV) measurements. From these measurements, device par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7fc24cfa3f585cce6f497bca472a4bd
https://doi.org/10.1016/j.nima.2020.164961
https://doi.org/10.1016/j.nima.2020.164961
Autor:
Ashok K. Sood, Jeomoh Kim, Russell D. Dupuis, Jay Lewis, Mi-Hee Ji, Nibir K. Dhar, Theeradetch Detchprohm
Publikováno v:
IEEE Photonics Technology Letters. 28:2015-2018
GaN p-i-n ultraviolet avalanche photodiodes (UV-APDs) were fabricated from epitaxial structures grown on low-dislocation-density free-standing GaN substrates to form $4\times 4$ UV-APD arrays with a device size of $75\times 75~\mu \text{m}^{{ {2}}}$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fc0be23f707fd6b0aa0055ac5038f7d
https://doi.org/10.1109/lpt.2016.2580038
https://doi.org/10.1109/lpt.2016.2580038