Zobrazeno 1 - 10
of 134
pro vyhledávání: '"Mišeikis V"'
Autor:
Marconi, S., Giambra, M. A., Montanaro, A., Mišeikis, V., Soresi, S., Tirelli, S., Galli, P., Buchali, F., Templ, W., Coletti, C., Sorianello, V., Romagnoli, M.
The challenge of next generation datacom and telecom communication is to increase the available bandwidth while reducing the size, cost and power consumption of photonic integrated circuits. Silicon (Si) photonics has emerged as a viable solution to
Externí odkaz:
http://arxiv.org/abs/2006.01481
Autor:
Persichetti, L., De Seta, M., Scaparro, A. M., Miseikis, V., Notargiacomo, A., Ruocco, A., Sgarlata, A., Fanfoni, M., Fabbri, F., Coletti, C., Di Gaspare, L.
Publikováno v:
Applied Surface Science 499, 143923 (2019)
We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spectroscopic and morphological information, we find that the quality of g
Externí odkaz:
http://arxiv.org/abs/1906.01571
Autor:
Muench, J. E., Ruocco, A., Giambra, M. A., Miseikis, V., Zhang, D., Wang, J., Watson, H. F. Y., Park, G. C., Akhavan, S., Sorianello, V., Midrio, M., Tomadin, A., Coletti, C., Romagnoli, M., Ferrari, A. C., Goykhman, I.
Publikováno v:
Nano Lett 19, 7632 (2019)
We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external respo
Externí odkaz:
http://arxiv.org/abs/1905.04639
Autor:
Persichetti, L., Di Gaspare, L., Fabbri, F., Scaparro, A. M., Notargiacomo, A., Sgarlata, A., Fanfoni, M., Miseikis, V., Coletti, C., De Seta, M.
Publikováno v:
Carbon 145, 345 (2019)
By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition temperature in close proximity to the Ge melting point, highlighting
Externí odkaz:
http://arxiv.org/abs/1901.06311
Autor:
Haghighian, N., Convertino, D., Miseikis, V., Bisio, F, Morgante, A., Coletti, C., Canepa, M., Cavalleri, O.
Publikováno v:
N. Haghighian et al., Phys. Chem. Chem. Phys., 2018,20, 13322-13330
The surface structure of Few-Layer Graphene (FLG) epitaxially grown on the C-face of SiC has been investigated by TM-AFM in ambient air and upon interaction with diluted aqueous solutions of bio-organic molecules (dimethyl sulfoxide, DMSO, and L-Meth
Externí odkaz:
http://arxiv.org/abs/1810.13212
Autor:
Di Gaspare, L., Scaparro, A. M., Fanfoni, M., Fazi, L., Sgarlata, A., Notargiacomo, A., Miseikis, V., Coletti, C., De Seta, M.
Publikováno v:
Carbon, Volume 134, August 2018, Pages 183-188
In this work we shed light on the early stage of the chemical vapor deposition of graphene on Ge(001) surfaces. By a combined use of microRaman and x-ray photoelectron spectroscopies, and scanning tunneling microscopy and spectroscopy, we were able t
Externí odkaz:
http://arxiv.org/abs/1805.01192
Autor:
Scaparro, A. M., Miseikis, V., Coletti, C., Notargiacomo, A., Pea, M., De Seta, M., Di Gaspare, L.
Publikováno v:
ACS Appl. Mat. Interfaces 8, 48, pp 33083-33090 (2016)
Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control over the properties of high-quality graphene synthesized on Ge surfaces,
Externí odkaz:
http://arxiv.org/abs/1805.01185
Publikováno v:
MRS Advances, 1(55), 3667-3672. doi:10.1557/adv.2016.369
This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The topography of t
Externí odkaz:
http://arxiv.org/abs/1805.00683
Autor:
Aliaj, I., Torre, I., Miseikis, V., di Gennaro, E., Sambri, A., Gamucci, A., Coletti, C., Beltram, F., Granozio, F. M., Polini, M., Pellegrini, V., Roddaro, S.
Publikováno v:
APL Mater. 4, 066101 (2016)
We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electri
Externí odkaz:
http://arxiv.org/abs/1602.07506
Autor:
Mashoff, T., Convertino, D., Miseikis, V., Coletti, C., Piazza, V., Tozzini, V., Beltram, F., Heun, S.
Publikováno v:
Applied Physics Letters 106, 083901 (2015)
Titanium-island formation on graphene as a function of defect density is investigated. When depositing titanium on pristine graphene, titanium atoms cluster and form islands with an average diameter of about 10nm and an average height of a few atomic
Externí odkaz:
http://arxiv.org/abs/1410.2741