Zobrazeno 1 - 10
of 253
pro vyhledávání: '"Meyerson, B.S."'
Autor:
Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Megdanis, A.C., Stanis, C.L., Bright, A.A., Kroesen, G.M.W., Warren, A.C.
Publikováno v:
VLSI technology : symposium : digest of technical papers, May 28-30, 1991, Oiso, 105-106
STARTPAGE=105;ENDPAGE=106;TITLE=VLSI technology : symposium : digest of technical papers, May 28-30, 1991, Oiso
STARTPAGE=105;ENDPAGE=106;TITLE=VLSI technology : symposium : digest of technical papers, May 28-30, 1991, Oiso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::570753471878472041537b0846a233fc
https://research.tue.nl/nl/publications/4d59e0c2-4d7b-4c32-a044-caf82ae1ad6f
https://research.tue.nl/nl/publications/4d59e0c2-4d7b-4c32-a044-caf82ae1ad6f
Autor:
Verdonckt-Vandebroek, Sophie, Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, Phillip J., Stork, J.M.C., Megdanis, A.C., Stanis, C.L., Bright, A.A., Kroesen, G.M.W., Warren, A.C.
Publikováno v:
IEEE Electron Device Letters, 12(8), 447-449. Institute of Electrical and Electronics Engineers
A novel subsurface SiGE-channel p-MOSFET is demonstrated in which modulation doping is used to control the threshold voltage without degrading the channel mobility. A novel device design consisting of a graded SiGe channel, an n+ polysilicon gate, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::d1e720ae702ddc8f021b519b467689fe
https://research.tue.nl/nl/publications/163b7870-f903-4dcd-aed1-32bbc416d2c0
https://research.tue.nl/nl/publications/163b7870-f903-4dcd-aed1-32bbc416d2c0
Publikováno v:
Proceedings of the Bipolar Circuits & Technology Meeting; 1989, p57-64, 8p
Autor:
Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C.
Publikováno v:
1991 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices & Circuits; 1991, p425-434, 10p
Publikováno v:
1987 International Electron Devices Meeting; 1987, p405-408, 4p
Publikováno v:
1986 International Electron Devices Meeting; 1986, p304-307, 4p
Autor:
Sunderland, D.A., Jeng, S.-J., Nguyen-Ngoc, D., Martin, B., Eld, E.C., Tewksbury, T., Ahlgren, D.C., Gilbert, M.M., Malinowski, J.C., Schonenberg, K.T., Stein, K.J., Meyerson, B.S., Harame, D.L.
Publikováno v:
Proceedings of the 1996 BIPOLAR/BiCMOS Circuits & Technology Meeting; 1996, p23-26, 4p
Autor:
Nguyen-Ngoc, D., Harame, D.L., Burghartz, J.N., McIntosh, R.C., Crabbe, E.F., Warnock, J.D., Stanis, C.L., Meyerson, B.S., Cotte, J.M., Comfort, J.H.
Publikováno v:
Proceedings of the 1991 Bipolar Circuits & Technology Meeting; 1991, p75-78, 4p
Autor:
Nguyen-Ngoc, D., Harame, D.L., Malinowski, J.C., Jeng, S.J., Schonenberg, K.T., Gilbert, M.M., Berg, G.D., Wu, S., Soyuer, M., Tallman, K.A., Stein, K.J., Groves, R.A., Subbanna, S., Colavito, D.B., Sunderland, D.A., Meyerson, B.S.
Publikováno v:
Proceedings of Bipolar/Bicmos Circuits & Technology Meeting; 1995, p89-92, 4p
Publikováno v:
Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94; 1994, p24-27, 4p