Zobrazeno 1 - 10
of 305
pro vyhledávání: '"Meyer David J"'
Autor:
Vaca, Diego, Barry, Matthew, Yates, Luke, Nepal, Neeraj, Katzer, D. Scott, Downey, Brian P., Wheeler, Virginia, Nyakiti, Luke, Meyer, David J., Graham, Samuel, Kumar, Satish
We report a method to obtain insights into lower thermal conductivity of \beta-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical predictions to decip
Externí odkaz:
http://arxiv.org/abs/2205.02179
Autor:
Gokhale, Vikrant J., Downey, Brian P., Katzer, D. Scott, Nepal, Neeraj, Lang, Andrew C., Stroud, Rhonda M., Meyer, David J.
Publikováno v:
Nat Commun 11, 2314 (2020)
Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic w
Externí odkaz:
http://arxiv.org/abs/2003.11097
Publikováno v:
In Fire Safety Journal December 2023 141
Publikováno v:
Malaria Journal, Vol 2, Iss 1, p 26 (2003)
Abstract Background The 8-amino and 9-hydroxy substituents of antimalarial cinchona alkaloids have the erythro orientation while their inactive 9-epimers are threo. From the X-ray structures a 90° difference in torsion angle between the N1-H1 and C9
Externí odkaz:
https://doaj.org/article/68aabdda05f9471a83371ff39d1284d5
Publikováno v:
Journal of Physics: Conference Series; 2024, Vol. 2885 Issue 1, p1-6, 6p
Autor:
Deen, David A., Miller, Ross, Osinsky, Andrei, Downey, Brian P., Storm, David F., Meyer, David J., Katzer, D. Scott, Nepal, Neeraj
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are uti
Externí odkaz:
http://arxiv.org/abs/1610.03921
Autor:
Tadjer, Marko J., Wheeler, Virginia D., Downey, Brian P., Robinson, Zachary R., Meyer, David J., Eddy, Jr., Charles R., Kub, Fritz J.
Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the c
Externí odkaz:
http://arxiv.org/abs/1602.06340
A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-state related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are util
Externí odkaz:
http://arxiv.org/abs/1508.07794
Publikováno v:
Plant Physiology, 2005 May 01. 138(1), 218-231.
Externí odkaz:
https://www.jstor.org/stable/4629819
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