Zobrazeno 1 - 10
of 362
pro vyhledávání: '"Meyer, W.E."'
Autor:
Auret, F.D., Meyer, W.E., Janse van Rensburg, P.J., Hayes, M., Nel, J.M., von Wenckstern, Holger, Hochmuth, Holger, Biehne, G., Lorenz, Michael, Grundmann, Marius
We have used deep level transient spectroscopy (DLTS) to characterise four defects with shallow levels in ZnO grown by pulsed laser deposition (PLD). These defects all have DLTS peaks below 100 K. From DLTS measurements and Arrhenius plots we have ca
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A80084
https://ul.qucosa.de/api/qucosa%3A80084/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A80084/attachment/ATT-0/
Publikováno v:
In Physica B: Condensed Matter 15 July 2024 685
Publikováno v:
In Materials Science in Semiconductor Processing December 2022 152
Autor:
Igumbor, E., Olaniyan, O., Dongho-Nguimdo, G.M., Mapasha, R.E., Ahmad, S., Omotoso, E., Meyer, W.E.
Publikováno v:
In Materials Science in Semiconductor Processing 1 November 2022 150
Autor:
Meyer, W.E. (Walter Ernst)
Since the development of deep level transient spectroscopy (DLTS) in the 1970’s by Lang and others, the technique has become a powerful analytical tool to characterise the electrical properties of defects in semiconductors. With the development of
Externí odkaz:
http://hdl.handle.net/2263/25602
http://upetd.up.ac.za/thesis/available/etd-06182007-143820/
http://upetd.up.ac.za/thesis/available/etd-06182007-143820/
Publikováno v:
In Journal of Physics and Chemistry of Solids July 2020 142
Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon
Autor:
Abdurrazaq, A., Meyer, W.E.
Publikováno v:
In Physica B: Physics of Condensed Matter 1 November 2019 572:238-241
Publikováno v:
In Materials Research Bulletin July 2019 115:12-18
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 1 March 2019 442:28-30
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 1 March 2019 442:41-46