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Using combined low temperature scanning tunneling microscopy (STM) and atomic force microscopy (AFM), we demonstrate hydrogen passivation of individual, selected dangling bonds (DBs) on a hydrogen-passivated Si(100)-2$\times$1 surface (H-Si) by atom
Externí odkaz:
http://arxiv.org/abs/1706.02560
Autor:
Murata, Yuya, Cavallucci, Tommaso, Tozzini, Valentina, Pavliček, Niko, Gross, Leo, Meyer, Gerhard, Takamura, Makoto, Hibino, Hiroki, Beltram, Fabio, Heun, Stefan
Publikováno v:
Nano Research 2018, 11(2) 864-873
Si dangling bonds without H termination at the interface of quasi-free standing monolayer graphene (QFMLG) are known scattering centers that can severely affect carrier mobility. In this report, we study the atomic and electronic structure of Si dang
Externí odkaz:
http://arxiv.org/abs/1706.01422
Autor:
Hauptmann, Nadine, González, César, Mohn, Fabian, Gross, Leo, Meyer, Gerhard, Berndt, Richard
Publikováno v:
Nanotechnology 26 (2015) 445703 (6pp)
C60-functionalized tips are used to probe C60 molecules on Cu(111) with scanning tunneling and atomic force microscopy. Distinct and complex intramolecular contrasts are found. Maximal attractive forces are observed when for both molecules a [6,6] bo
Externí odkaz:
http://arxiv.org/abs/1704.08466
Autor:
Schuler, Bruno, Persson, Mats, Paavilainen, Sami, Pavliček, Niko, Gross, Leo, Meyer, Gerhard, Repp, Jascha
Publikováno v:
Phys. Rev. B 91, 235443 (2015)
The formation of extended electron states in one-dimensional nanostructures is of key importance for the function of molecular electronics devices. Here we study the effects of strong electron-phonon interaction on the formation of extended electroni
Externí odkaz:
http://arxiv.org/abs/1503.06040