Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Mews, M."'
Autor:
James, R. S., Rule, K., Barberio, E., Bashu, V. U., Bignell, L. J., Bolognino, I., Brooks, G., Chhun, S. S., Dastgiri, F., Duffy, A. R., Froehlich, M., Fruth, T. M. A., Fu, G., Hill, G. C., Janssens, K., Kapoor, S., Lane, G. J., Leaver, K. T., McGee, P., McKie, L. J., McNamara, P. C., McKenzie, J., Melbourne, W. J. D., Mews, M., Milligan, L. J., Mould, J., Nuti, F., Scutti, F., Slavkovska, Z., Spinks, N. J., Stanley, O., Stuchbery, A. E., Suerfu, B., Taylor, G. N., Urquijo, P., Williams, A. G., Xing, Y., Zhong, Y. Y., Zurowski, M. J.
The persistence of the DAMA/LIBRA (DAMA) modulation over the past two decades has been a source of great contention within the dark matter community. The DAMA collaboration reports a persistent, modulating event rate within their setup of NaI(Tl) sci
Externí odkaz:
http://arxiv.org/abs/2408.08697
Autor:
Barberio, E., Baroncelli, T., Bignell, L. J., Bolognino, I., Brooks, G., Dastgiri, F., D'Imperio, G., Di Giacinto, A., Duffy, A. R., Froehlich, M., Fu, G., Gerathy, M. S. M., Hill, G. C., Krishnan, S., Lane, G. J., Lawrence, G., Leaver, K. T., Mahmood, I., Mariani, A., McGee, P., McKie, L. J., McNamara, P. C., Mews, M., Melbourne, W. J. D., Milana, G., Milligan, L. J., Mould, J., Nuti, F., Pettinacci, V., Scutti, F., Slavkovská, Z., Spinks, N. J., Stanley, O., Stuchbery, A. E., Taylor, G. N., Tomei, C., Urquijo, P., Vignoli, C., Williams, A. G., Zhong, Y. Y., Zurowski, M. J.
SABRE (Sodium iodide with Active Background REjection) is a direct detection dark matter experiment based on arrays of radio-pure NaI(Tl) crystals. The experiment aims at achieving an ultra-low background rate and its primary goal is to confirm or re
Externí odkaz:
http://arxiv.org/abs/2205.13849
Akademický článek
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Autor:
Mazzarella, L., Kirner, S., Mews, M., Conrad, E., Korte, L., Stannowski, B., Rech, B., Schlatmann, R.
Publikováno v:
In Energy Procedia 2014 60:123-128
Autor:
Braunger, S., Mundt, L.E., Wolff, C.M., Mews, M., Rehermann, C., Jost, M., Tejada, A., Eisenhauer, D., Becker, C., Guerra, J.A., Unger, E., Korte, L., Neher, D., Schubert, M.C., Rech, B., Albrecht, S.
We report on the formation of wrinkle-patterned surface morphologies in cesium formamidinium-based CsxFA1-xPb(I1-yBry)3 perovskite compositions with x = 0-0.3 and y = 0-0.3 under various spin-coating conditions. By varying the Cs and Br contents, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::26b4356657ffeb0d0415dca7b4f91b46
https://publica.fraunhofer.de/handle/publica/256678
https://publica.fraunhofer.de/handle/publica/256678
In this work, the valence band offset amp; 916;EV and hole transport across the heterojunction between amorphous silicon suboxides a SiOx H and crystalline silicon c Si is investigated. Thin layers ranging from pure intrinsic a Si H to near stoichiom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3680::4f16646eaa471bab51162fded1c7bfef
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=87576
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=87576
31st European Photovoltaic Solar Energy Conference and Exhibition; 770-775
In this work, the valence band offset (EV) and hole transport across the heterojunction between amorphous silicon suboxides (a-SiOx:H) and crystalline silicon (c-Si) is i
In this work, the valence band offset (EV) and hole transport across the heterojunction between amorphous silicon suboxides (a-SiOx:H) and crystalline silicon (c-Si) is i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d1414f0d87cc48d021119194e045964
The heterojunction between amorphous silicon (sub)oxides (a-SiOx:H, 0 4 eV for the a-SiO2/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiOx:H is therefore unsuitable for the hole contact in heteroju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4732::0569d1809b864f8ed4e272d5b10ba138
https://refubium.fu-berlin.de/handle/fub188/16801
https://refubium.fu-berlin.de/handle/fub188/16801
Autor:
Ziegler, J., Mews, M., Kaufmann, K., Schneider, T., Sprafke, A.N., Korte, L., Wehrspohn, R.B.
A method for the deposition of molybdenum oxide ((Formula presented.)) with high growth rates at temperatures below 200 (Formula presented.) based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::72037ff3ed97d3a77854b812cfcc90ca
https://publica.fraunhofer.de/handle/publica/240751
https://publica.fraunhofer.de/handle/publica/240751
Excellent passivation of black silicon surfaces by thin amorphous silicon layers deposited with plasma enhanced chemical vapor deposition is demonstrated. Minority charge carrier lifetimes of 1.3 milliseconds, enabling an implied open circuit voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3680::2878bdfb03fbc543743ad41867de33e4
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=82776
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=82776